CAJ | 학술논문

采用基于第一性原理和太阳电池基本方程的wxAMPS软件，在理想情况下，模拟计算了单结In0.65 Ga0.35 N太阳电池的光电特性。计算结果表明：当p层厚度从130 nm逐渐增加到220 nm时，入射的光子吸收能量减少，从而产生的光生载流子数目减少，进而引起了开路电压、短路电流密度以及电池的转换效率均逐渐减小，但是填充因子却反而逐渐增大，为对单结In0.65 Ga0.35 N太阳电池的设计提供了理论的参考依据。
채용기우제일성원리화태양전지기본방정적wxAMPS연건，재이상정황하，모의계산료단결In0.65 Ga0.35 N태양전지적광전특성。계산결과표명：당p층후도종130 nm축점증가도220 nm시，입사적광자흡수능량감소，종이산생적광생재류자수목감소，진이인기료개로전압、단로전류밀도이급전지적전환효솔균축점감소，단시전충인자각반이축점증대，위대단결In0.65 Ga0.35 N태양전지적설계제공료이론적삼고의거。
Using first-principles and the basic equations of solar cell for wxAMPS software,the photovoltaic proper-ties of In0. 65 Ga0. 35 N single -junction solar cell was simulated and caleulated in the ideal condition. The results showed that:when the p-layer thickness gradually increased from 130nm to 220nm,the photon absorption energy reduced,with the number of photo-generated carriers reducing,so the conversion efficiency and open-circuit volt-age and the density of short circuit current also gradually decreased. In addition,the fill factor increased. Therefore, it provides a theoretical basis for the design of In0. 65 Ga0. 35 N single-junction solar cells.