CAJ | 학술논문

目的：通过 SRIM 程序模拟,对石英玻璃金属化工艺进行优化。方法对不同情况界面进行对比分析,配合 SRIM 程序模拟,得出理想的金属化界面,提出通过增加阻挡层的方法来得到这种界面。分析 SRIM 程序模拟结果,选取阻挡层分别为5,10,15,20 nm 四种厚度,模拟能量20 keV 的 Ti 离子注入不同厚度阻挡层样品中的射程分布,获取合适的阻挡层厚度,并利用高低温冲击方法进行验证。结果合适的阻挡层厚度范围为10~15 nm,在此范围内,注入的 Ti 离子最大浓度位置集中在金属化层与石英玻璃之间的界面附近。结论利用 SRIM 程序模拟可以得出最佳的阻挡层厚度范围,提高金属化层的性能。
목적：통과 SRIM 정서모의,대석영파리금속화공예진행우화。방법대불동정황계면진행대비분석,배합 SRIM 정서모의,득출이상적금속화계면,제출통과증가조당층적방법래득도저충계면。분석 SRIM 정서모의결과,선취조당층분별위5,10,15,20 nm 사충후도,모의능량20 keV 적 Ti 리자주입불동후도조당층양품중적사정분포,획취합괄적조당층후도,병이용고저온충격방법진행험증。결과합괄적조당층후도범위위10~15 nm,재차범위내,주입적 Ti 리자최대농도위치집중재금속화층여석영파리지간적계면부근。결론이용 SRIM 정서모의가이득출최가적조당층후도범위,제고금속화층적성능。
Objective To optimize the process of quartz metallization through SRIM simulation. Methods Though comparative analysis of different interfaces combined with SRIM simulation, the ideal metallization interface was obtained. The approach of adding the blocking layer was put forward to get the interface. The SRIM simulation results were analyzed, and four kinds of thick-ness (5, 10, 15, 20 nm) were selected. The range distribution of Ti ion with the energy of 20 keV implanted into specimens of blocking layer with different thicknesses was simulated to select the appropriate thickness and the metallization layer was tested with the method of high and low temperature shock. Results The range for the appropriate thickness of the blocking layer was 10 ~ 15 nm. Within this range, the site for the maximum concentration of implanted Ti was near the interface between the metallization lay-er and the quartz glass. Conclusion For the different ion implantation energy, the simulation could obtain the optimum thickness of blocking layer using SRIM program, and then improve the performance of the metallization layer.