中国有色金属学报
中國有色金屬學報
중국유색금속학보
THE CHINESE JOURNAL OF NONFERROUS METALS
2014年
9期
2345-2351
,共7页
ZrO2纳米管阵列%聚乙二醇%阳极氧化%生长机制
ZrO2納米管陣列%聚乙二醇%暘極氧化%生長機製
ZrO2납미관진렬%취을이순%양겁양화%생장궤제
ZrO2 nanotube array%polyethylene glycol%anodic oxidation%growth mechanism
在含NH4F的聚乙二醇(PEG-200)电解液中通过阳极氧化制备高度有序的二氧化锆纳米管阵列(ZrO2-NTs)。考察氧化电压、氧化时间以及电解液水含量对 ZrO2-NTs 形貌的影响,并讨论其生长机制,采用等效电路Rs(QfRf)(QdRc)对ZrO2-NTs的电化学阻抗谱进行拟合。结果表明,在该体系中ZrO2-NTs的形成包括氧化、水解形核以及膜溶解过程,氧化电压、氧化时间以及电解液水含量是影响ZrO2-NTs生长的重要因素,在含1.0%NH4F(质量分数)和5% H2O(体积分数)的 PEG-200电解液中,20 V 电压下氧化3 h 可制备得到管径为100~120 nm 的ZrO2-NTs。电化学阻抗谱分析结果表明,ZrO2膜层的界面电荷转移电阻较大。
在含NH4F的聚乙二醇(PEG-200)電解液中通過暘極氧化製備高度有序的二氧化鋯納米管陣列(ZrO2-NTs)。攷察氧化電壓、氧化時間以及電解液水含量對 ZrO2-NTs 形貌的影響,併討論其生長機製,採用等效電路Rs(QfRf)(QdRc)對ZrO2-NTs的電化學阻抗譜進行擬閤。結果錶明,在該體繫中ZrO2-NTs的形成包括氧化、水解形覈以及膜溶解過程,氧化電壓、氧化時間以及電解液水含量是影響ZrO2-NTs生長的重要因素,在含1.0%NH4F(質量分數)和5% H2O(體積分數)的 PEG-200電解液中,20 V 電壓下氧化3 h 可製備得到管徑為100~120 nm 的ZrO2-NTs。電化學阻抗譜分析結果錶明,ZrO2膜層的界麵電荷轉移電阻較大。
재함NH4F적취을이순(PEG-200)전해액중통과양겁양화제비고도유서적이양화고납미관진렬(ZrO2-NTs)。고찰양화전압、양화시간이급전해액수함량대 ZrO2-NTs 형모적영향,병토론기생장궤제,채용등효전로Rs(QfRf)(QdRc)대ZrO2-NTs적전화학조항보진행의합。결과표명,재해체계중ZrO2-NTs적형성포괄양화、수해형핵이급막용해과정,양화전압、양화시간이급전해액수함량시영향ZrO2-NTs생장적중요인소,재함1.0%NH4F(질량분수)화5% H2O(체적분수)적 PEG-200전해액중,20 V 전압하양화3 h 가제비득도관경위100~120 nm 적ZrO2-NTs。전화학조항보분석결과표명,ZrO2막층적계면전하전이전조교대。
Highly ordered ZrO2 nanotube arrays (ZrO2-NTs) were prepared by anodic oxidation in PEG-200 electrolyte containing NH4F. The effects of oxidation voltage, oxidation time and water content of the electrolyte on the morphology and structure of ZrO2-NTs were investigated intensively. Furthermore, the growth mechanism of ZrO2-NTs in PEG-200 electrolyte was discussed. Equivalent circuit model Rs(QfRf)(QdRc) was used to analyze the electrochemical impedance of ZrO2-NTs. The results show that the formation of ZrO2-NTs in this system experiences oxidation, hydrolysis-nucleation and oxide film dissolution processes. The oxidation voltage, oxidation time and water content in the electrolyte are important factors on the growth of ZrO2-NTs. Highly ordered ZrO2-NTs with tube diameters arranging from 100 to 120 nm can be obtained in PEG-200 containing 1.0%NH4F (mass fraction) and 5%H2O (volume fraction) at potential of 20 V for 3 h. The impedance analysis results indicate that the interface charge transfer resistance of the ZrO2 film is large.