CAJ | 학술논문

研究目的是探索半导体异质结构下的新型光电效应,为位置灵敏传感器的设计提供新思路.利用磁控溅射镀膜技术在P型硅基衬底上生长 N型Cr金属薄膜,从而得到Cr/SiO/Si的硅基纳米金属异质结构.使用纳米光刻蚀技术在金属层上按照设计的条纹图形进行光刻蚀加工,得到硅基纳米金属光刻蚀结构.在对结构进行I-V特性测量的过程中发现侧向光伏效应.使用635 nm,功率5 mW激光器时,其侧向光伏效应的最大灵敏度为4.844 mV·mm-1,并且线性度较好.
연구목적시탐색반도체이질결구하적신형광전효응,위위치령민전감기적설계제공신사로.이용자공천사도막기술재P형규기츤저상생장 N형Cr금속박막,종이득도Cr/SiO/Si적규기납미금속이질결구.사용납미광각식기술재금속층상안조설계적조문도형진행광각식가공,득도규기납미금속광각식결구.재대결구진행I-V특성측량적과정중발현측향광복효응.사용635 nm,공솔5 mW격광기시,기측향광복효응적최대령민도위4.844 mV·mm-1,병차선성도교호.
The purpose of this study is to explore new photoelectric effect under semiconductor heterostructures,and use the structure to design new position-sensitive sensor.Magnetron sputtering technique was used to grow N-type metal film (Cr)on the P-type Silicon substrate,in order to get a silicon-based nano-metal structure,consisting of Cr/SiO/Si.Silicon-based photoetching nano-metal structure was obtianed by using photolithography on the metal layer according to the design of the optical mask.During the measurement of I-V characteristic of the structure we discovered lateral photovoltaic effect in the structure.When using 6 3 5 nm,5 mW laser power,the maximum sensitivity of its lateral photovoltaic effect was 4.844 mv·mm-1 ,and I-V effet have good linearity at the same time.