西安理工大学学报
西安理工大學學報
서안리공대학학보
JOURNAL OF XI'AN UNIVERSITY OF TECHNOLOGY
2014年
2期
175-179
,共5页
高赟%赵高扬%段宗范%任洋
高赟%趙高颺%段宗範%任洋
고빈%조고양%단종범%임양
出发原料%喷雾热解%沉积速率%ITO薄膜
齣髮原料%噴霧熱解%沉積速率%ITO薄膜
출발원료%분무열해%침적속솔%ITO박막
precursor%spray pyrolysis%deposition rate%ITO film
分别以In(NO3)3·4.5H2O与InCl3·4H2O为出发原料、SnCl4·5H2O为掺杂剂、乙酰丙酮(AcAcH)为螯合剂、甲醇为溶剂使用喷雾热解法在普通钠钙玻璃板上制备了 ITO 薄膜。以In(NO3)3·4.5H2O为出发原料沉积ITO薄膜速率慢,沉积出的薄膜无择优取向,其晶粒在100~150 nm之间,品质因数为4.03×10-3Ω-1;而以 InCl3·4H2O为出发原料沉积 ITO薄膜速率快,沉积出的薄膜具有(400)择优取向,其晶粒尺寸在200~400 nm之间,品质因数为5.85×10-3Ω-1。
分彆以In(NO3)3·4.5H2O與InCl3·4H2O為齣髮原料、SnCl4·5H2O為摻雜劑、乙酰丙酮(AcAcH)為螯閤劑、甲醇為溶劑使用噴霧熱解法在普通鈉鈣玻璃闆上製備瞭 ITO 薄膜。以In(NO3)3·4.5H2O為齣髮原料沉積ITO薄膜速率慢,沉積齣的薄膜無擇優取嚮,其晶粒在100~150 nm之間,品質因數為4.03×10-3Ω-1;而以 InCl3·4H2O為齣髮原料沉積 ITO薄膜速率快,沉積齣的薄膜具有(400)擇優取嚮,其晶粒呎吋在200~400 nm之間,品質因數為5.85×10-3Ω-1。
분별이In(NO3)3·4.5H2O여InCl3·4H2O위출발원료、SnCl4·5H2O위참잡제、을선병동(AcAcH)위오합제、갑순위용제사용분무열해법재보통납개파리판상제비료 ITO 박막。이In(NO3)3·4.5H2O위출발원료침적ITO박막속솔만,침적출적박막무택우취향,기정립재100~150 nm지간,품질인수위4.03×10-3Ω-1;이이 InCl3·4H2O위출발원료침적 ITO박막속솔쾌,침적출적박막구유(400)택우취향,기정립척촌재200~400 nm지간,품질인수위5.85×10-3Ω-1。
Indium tin oxide (ITO)films are deposited on soda-lime glass substrates by the spray pyrolysis method with a spray solution of In(NO3)3·4.5H2O and InCl3·3H2O as a precursor, SnCl4·5H2O as a dopant and acetylacetone (AcAcH)as a chelating agent.The deposition rate of ITO film without orientation using In(NO3)3·4.5H2O is lower,and the figure merit of film with grains from 100~150 nm is 4.03×10-3Ω-1 .The deposition rate of ITO film with (400)o-rientation using InCl3 ·4H2 O is faster,and the figure merit of film with grains from 200~400 nm is 5.85×10-3Ω-1 .