CAJ | 학술논문

为了研究矩形激光脉冲辐照下半导体材料3维光生载流子浓度和温度场分布，采用本征函数法求得了等离子体波和热波随时间和空间变化的解析解。数值模拟了矩形激光脉冲辐照下半导体内光生载流子浓度和温度的时间变化规律以及温度沿径向的扩散规律。结果表明，光生载流子表面复合速率、寿命和扩散系数等参量对等离子体波和热波分布的时域特性有重要的影响，特别是在等离子体波和热波阶跃响应的上升和下降沿阶段；此外，多参量拟合灵敏度以及相关性分析表明，对阶跃响应曲线进行拟合可实现对半导体参量的单参量及双参量表征。该理论结果对于利用阶跃光激励的光热技术测量半导体材料参量具有一定的指导作用。
위료연구구형격광맥충복조하반도체재료3유광생재류자농도화온도장분포，채용본정함수법구득료등리자체파화열파수시간화공간변화적해석해。수치모의료구형격광맥충복조하반도체내광생재류자농도화온도적시간변화규률이급온도연경향적확산규률。결과표명，광생재류자표면복합속솔、수명화확산계수등삼량대등리자체파화열파분포적시역특성유중요적영향，특별시재등리자체파화열파계약향응적상승화하강연계단；차외，다삼량의합령민도이급상관성분석표명，대계약향응곡선진행의합가실현대반도체삼량적단삼량급쌍삼량표정。해이론결과대우이용계약광격려적광열기술측량반도체재료삼량구유일정적지도작용。
In order to study three-dimensional photo-generated carrier density and temperature field distribution in semiconductor materials excited by the rectangular laser pulse , the analytical expressions of the temporal and space distributions of plasma wave and thermal wave were obtained by using the eigen function method .The time evolutions of the plasma and thermal wave for different characterized parameters of semiconductor samples and the radial diffusion characterizations of thermal wave in semiconductors were numerically simulated .The simulation results show that the characterized parameters of semiconductor samples such as surface recombination rates , lifetimes and diffusivity have important influences on temporal characteristics of plasma wave and thermal wave , especially at the stage of step changes . In addition , the sensitivity and correlation analysis of multi-parameters estimation shows that the characterization of single or two semiconductor parameters can be realized by fitting step response curve .The theoretical study provides the guidance for parameters measurement of semiconductor materials by the pulsed photothermal techniques using step optical excitation .