中南大学学报（英文版）
中南大學學報（英文版）
중남대학학보（영문판）
JOURNAL OF CENTRAL SOUTH UNIVERSITY OF TECHNOLOGY(ENGLISH EDITION)
2014年
1期
71-75
,共5页
黄小忠%周珊%程勇%杜作娟%段曦东%王超英
黃小忠%週珊%程勇%杜作娟%段晞東%王超英
황소충%주산%정용%두작연%단희동%왕초영
polycarbosilane%beryllium%precursor%ceramization
Polycarbosilane containing beryllium (BPCS) precursors was prepared by the reaction of polycarbosilane (PCS) with beryllium acetylacetone (Be (acac)2). The analysis of structures and components of BPCS demonstrates that their main structures are basically the same as PCS. Ceramization of BPCS precursors shows that BPCS precursors are organic below 600 °C and inorganic at 800 °C. At 1400 °C, BPCS precursors convert into silicon carbide ceramics. The ceramization of different beryllium content precursors were studied, which show that beryllium plays an important role in the inhibition of crystalline grain growth ofβ-SiC at high temperature and it can adjust the dielectric constant of silicon carbide ceramics.
