中南大学学报（英文版）
中南大學學報（英文版）
중남대학학보（영문판）
JOURNAL OF CENTRAL SOUTH UNIVERSITY OF TECHNOLOGY(ENGLISH EDITION)
2014年
1期
9-13
,共5页
徐东%姜斌%崔凤单%杨永涛%徐红星%宋琪%于仁红
徐東%薑斌%崔鳳單%楊永濤%徐紅星%宋琪%于仁紅
서동%강빈%최봉단%양영도%서홍성%송기%우인홍
zinc oxide%varistor%film%sol-gel process%electrical properties%microstructure
Microstructure and electrical properties of La2O3-doped ZnO-Bi2O3 thin films prepared by sol-gel process have been investigated. X-ray diffraction shows that most diffraction peaks of ZnO are equal, and the crystals of ZnO grow well. Scanning electron microscopy and atomic force microscopy results indicate that the samples have a good structure and lower surface roughness. The nonlinear V-I characteristics of the films show that La2O3 develops the electrical properties largely and the best doped content is 0.3%lanthanum ion, with the leakage current of 0.25 mA, the threshold field of 150 V/mm and the nonlinear coefficient of 4.0 in detail.
