常熟理工学院学报
常熟理工學院學報
상숙리공학원학보
JOURNAL OF CHANGSHU INSTITUTE OF TECHNOLOGY
2014年
4期
51-54
,共4页
TiO2薄膜%Co-Pi%Cu2O%电化学沉积%光电化学性质
TiO2薄膜%Co-Pi%Cu2O%電化學沉積%光電化學性質
TiO2박막%Co-Pi%Cu2O%전화학침적%광전화학성질
Titatium oxide film%Co-Pi%Cuprous oxide%electrochemical deposition method%photoelectrochemi-cal properties
用阳极氧化法在Ti基片上制备出TiO2薄膜，然后通过电化学沉积法将Co-Pi和Cu2O沉积在TiO2薄膜表面。通过扫描电镜、X-射线衍射和光电化学性质测试，发现TiO2薄膜表面先沉积Co-Pi能够有效阻止Cu2O颗粒堆积，光电流显著提高。而先沉积Cu2O后沉积Co-Pi，则会使Cu2O还原为Cu，同时形貌发生改变。特别地，沉积300秒Co-Pi后再沉积Cu2O颗粒，能得到200 mA/cm2的最大光电流。
用暘極氧化法在Ti基片上製備齣TiO2薄膜，然後通過電化學沉積法將Co-Pi和Cu2O沉積在TiO2薄膜錶麵。通過掃描電鏡、X-射線衍射和光電化學性質測試，髮現TiO2薄膜錶麵先沉積Co-Pi能夠有效阻止Cu2O顆粒堆積，光電流顯著提高。而先沉積Cu2O後沉積Co-Pi，則會使Cu2O還原為Cu，同時形貌髮生改變。特彆地，沉積300秒Co-Pi後再沉積Cu2O顆粒，能得到200 mA/cm2的最大光電流。
용양겁양화법재Ti기편상제비출TiO2박막，연후통과전화학침적법장Co-Pi화Cu2O침적재TiO2박막표면。통과소묘전경、X-사선연사화광전화학성질측시，발현TiO2박막표면선침적Co-Pi능구유효조지Cu2O과립퇴적，광전류현저제고。이선침적Cu2O후침적Co-Pi，칙회사Cu2O환원위Cu，동시형모발생개변。특별지，침적300초Co-Pi후재침적Cu2O과립，능득도200 mA/cm2적최대광전류。
TiO2 film is prepared on Ti substrates by anodic oxidation method. Then Co-Pi and Cu2O particles are fabricated on TiO2 flat surface using a facial electrochemical deposition method. Scanning electron microsco-py, X-ray diffraction and photoelectrochemical properties reflect that depositing Co-Pi particles in advance on the surface of TiO2 thin films can prevent Cu2O forming stacked particle structure, increase the photocurrent sig-nificantly, and deposit Co-Pi after Cu2O makes Cu2O reduction to Cu and that at the same time the morphology changes a lot. Specifically, when the deposition time of Co-Pi is set to be 300 s, the structure of TiO2/Co-Pi/Cu2O can get the maximum photocurrent of 200 A cm-2 .
