电子工艺技术
電子工藝技術
전자공예기술
ELECTRONICS PROCESS TECHNOLOGY
2014年
4期
237-238,245
,共3页
侯晓蕊%王英民%李斌%戴鑫
侯曉蕊%王英民%李斌%戴鑫
후효예%왕영민%리빈%대흠
n型4H-SiC%生长温度%冷却孔直径%掺氮量%结晶质量
n型4H-SiC%生長溫度%冷卻孔直徑%摻氮量%結晶質量
n형4H-SiC%생장온도%냉각공직경%참담량%결정질량
n type 4H-SiC%Growth temperature%Thermoscope hole diameter%Concentration of N2%Crystallinity
采用PVT法掺氮得到n型4H-SiC体单晶。研究了生长温度、冷却孔直径、掺氮量对晶体结晶质量的影响。实验结果表明：生长温度过低或过高会引入多型；冷却孔过大会使晶体产生较大的热应力，导致晶体开裂；掺入较多的氮使SiC晶格畸变。通过调整温场、优化掺氮工艺，获得了生长n型4H-SiC单晶的工艺条件，生长出结晶质量较好的n型4H-SiC单晶。
採用PVT法摻氮得到n型4H-SiC體單晶。研究瞭生長溫度、冷卻孔直徑、摻氮量對晶體結晶質量的影響。實驗結果錶明：生長溫度過低或過高會引入多型；冷卻孔過大會使晶體產生較大的熱應力，導緻晶體開裂；摻入較多的氮使SiC晶格畸變。通過調整溫場、優化摻氮工藝，穫得瞭生長n型4H-SiC單晶的工藝條件，生長齣結晶質量較好的n型4H-SiC單晶。
채용PVT법참담득도n형4H-SiC체단정。연구료생장온도、냉각공직경、참담량대정체결정질량적영향。실험결과표명：생장온도과저혹과고회인입다형；냉각공과대회사정체산생교대적열응력，도치정체개렬；참입교다적담사SiC정격기변。통과조정온장、우화참담공예，획득료생장n형4H-SiC단정적공예조건，생장출결정질량교호적n형4H-SiC단정。
Nitrogen-doped 4H-SiC single crystals grown by physical vapor transport were investigated. Studied the effect of growth temperature, thermoscope hole diameter and concentration of N2 on Crystallinity. Experiments indicate that too high or too low growth temperature would lead to polytype. Large hole diameter would generated large thermal stress, which resulted in the crystal cracking. The incorporation of more nitrogen would cause lattice distortion. By adjusting the temperature field, optimizing process, obtaining good crystalline quality of n type 4H-SiC.
