CAJ | 학술논문

本文应用平面波展开法数值模拟了椭圆柱二维光子晶体TM模带隙特性，数值模拟椭圆长短半轴对带隙特性的影响,结果得到：当椭圆长短半轴趋于相等时形成带隙宽度逐渐增加。数值模拟四种材料即SiC、GaAs、Ge和ZnO构成椭圆柱正方晶格二维光子晶体时，TM模带隙特性和第一带隙变化情况，结果得到介电常数高的材料形成较宽带隙，随着介电常数的增加，第一带隙上下边界的归一化频率逐渐降低，但是，第一带隙带隙宽度逐渐增加。
본문응용평면파전개법수치모의료타원주이유광자정체TM모대극특성，수치모의타원장단반축대대극특성적영향,결과득도：당타원장단반축추우상등시형성대극관도축점증가。수치모의사충재료즉SiC、GaAs、Ge화ZnO구성타원주정방정격이유광자정체시，TM모대극특성화제일대극변화정황，결과득도개전상수고적재료형성교관대극，수착개전상수적증가，제일대극상하변계적귀일화빈솔축점강저，단시，제일대극대극관도축점증가。
The application of plane wave expansion method to numerical simulation of the elliptic cylinder two-dimensional photonic crystals with TM band gap characteristics, numerical simulation of elliptic half shaft length effect on the characteristic of band gap is presented. The results show when the length of the ellipse equals the half shaft tends to form a band gap width gradually increase the numerical simulation of four kinds of material SiC GaAs Ge and ZnO elliptic cylinder tetragonal TM modes when two-dimensional photonic crystal band gap character-istics and the change of the gap, the resulting material form the broadband gap, high dielectric constant with the in-crease of dielectric constant of the first gap upper and lower boundary of the normalized frequency gradually reduce, but the first gap width of band gap increased gradually.