CAJ | 학술논문

针对镁光公司的4种NAND型Flash存储器，开展了不同辐照偏置下的总剂量效应实验及不同工艺尺寸器件的静态加电辐照实验。实验结果表明，器件在静态加电和动态辐照偏置下的总剂量效应相似，而与不加电辐照偏置下的总剂量效应不同。不同工艺尺寸器件的敏感参数有相同的变化趋势，由于受其他因素的综合影响，各敏感参数并不随工艺尺寸单调变化。
침대미광공사적4충NAND형Flash존저기，개전료불동복조편치하적총제량효응실험급불동공예척촌기건적정태가전복조실험。실험결과표명，기건재정태가전화동태복조편치하적총제량효응상사，이여불가전복조편치하적총제량효응불동。불동공예척촌기건적민감삼수유상동적변화추세，유우수기타인소적종합영향，각민감삼수병불수공예척촌단조변화。
Total ionizing dose (TID ) effect experiments on four kinds of devices of different feature sizes from Micron Technology Company were carried out .Experiment results indicate that the phenomena of TID effect under the static bias is similar to that under the dynamic bias , but is different from the unbiased one . The sensitive parameters of different feature sizes have the similar change trend ,but don’t vary with feature size monotonously because of the synthetic influence of other factors .