CAJ | 학술논문

通过讨论氮、硼、硅、氟等非金属原子掺杂的碳纳米管，对场电子发射特性的影响。介绍了掺杂在场电子发射、能源电池、气体传感器等领域的研究和应用。掺杂可以增加碳纳米管的缺陷，改变其电子结构。掺杂可使碳纳米管转变为n型半导体或是金属性导体，将提高场发射性能。同时，掺杂亦可使碳纳米管向p型半导体转变，这将不利于场发射性能改善。当场发射性能随着掺杂浓度升高而提高时，存在最佳掺杂浓度值，一旦超出，则场发射性能逐渐下降。因此，研究碳纳米管非金属掺杂具有重要的应用价值。
통과토론담、붕、규、불등비금속원자참잡적탄납미관，대장전자발사특성적영향。개소료참잡재장전자발사、능원전지、기체전감기등영역적연구화응용。참잡가이증가탄납미관적결함，개변기전자결구。참잡가사탄납미관전변위n형반도체혹시금속성도체，장제고장발사성능。동시，참잡역가사탄납미관향p형반도체전변，저장불리우장발사성능개선。당장발사성능수착참잡농도승고이제고시，존재최가참잡농도치，일단초출，칙장발사성능축점하강。인차，연구탄납미관비금속참잡구유중요적응용개치。
The structural and electronic properties of carbon nanotubes(CNTs)doped with nonmetallic element N,B, Si or F are discussed. Research&development efforts on fields including field emission,energy cells and gas sensing are presented for the doped CNTs. The doping could increase the defects in CNTs and alter the electronic structures. The CNTs could be transferred to N-type semiconductor or metallic conductor from the doping,leading the improvement of the field emission. The doping could also transfer CNTs to P-type semiconductors,caused the degradation of field emis-sion. There is an optimized value of doping content with the improvement of field emission. The studies of the nonmetallic doping in CNTs are very important for various practical applications.