原子与分子物理学报
原子與分子物理學報
원자여분자물이학보
CHINESE JOURNAL OF ATOMIC AND MOLECULAR PHYSICS
2014年
4期
555-559
,共5页
闫东芝%炎正馨%龚安%陈倩%廖谦
閆東芝%炎正馨%龔安%陳倩%廖謙
염동지%염정형%공안%진천%료겸
甲烷%硅表面%物理吸附%密度泛函理论
甲烷%硅錶麵%物理吸附%密度汎函理論
갑완%규표면%물리흡부%밀도범함이론
Methane%Si surface%Physical adsorption%DFT
在密度泛函理论耦合超软贋势第一性原理的平台上,研究了甲烷在Si(111)表面的物理吸附特性。通过建立硅晶胞的不同吸附位置(top、bridge、fcc)模型,对比分析了甲烷在相应位置吸附界面变化的键结构、吸附能和态密度,获得了相应吸附点的吸附特征。对比分析的结果表明,甲烷只有在 fcc 位置物理吸附状态较为理想。分析态密度、键长及键角等数据揭示 fcc位甲烷吸附对体系硅晶胞有很大的影响,其体系的键能最低,即此时体系结构最稳定。本文所得研究成果可用于 Si表面对甲烷气体的敏感性分析及气体传感器领域。
在密度汎函理論耦閤超軟贋勢第一性原理的平檯上,研究瞭甲烷在Si(111)錶麵的物理吸附特性。通過建立硅晶胞的不同吸附位置(top、bridge、fcc)模型,對比分析瞭甲烷在相應位置吸附界麵變化的鍵結構、吸附能和態密度,穫得瞭相應吸附點的吸附特徵。對比分析的結果錶明,甲烷隻有在 fcc 位置物理吸附狀態較為理想。分析態密度、鍵長及鍵角等數據揭示 fcc位甲烷吸附對體繫硅晶胞有很大的影響,其體繫的鍵能最低,即此時體繫結構最穩定。本文所得研究成果可用于 Si錶麵對甲烷氣體的敏感性分析及氣體傳感器領域。
재밀도범함이론우합초연안세제일성원리적평태상,연구료갑완재Si(111)표면적물리흡부특성。통과건립규정포적불동흡부위치(top、bridge、fcc)모형,대비분석료갑완재상응위치흡부계면변화적건결구、흡부능화태밀도,획득료상응흡부점적흡부특정。대비분석적결과표명,갑완지유재 fcc 위치물리흡부상태교위이상。분석태밀도、건장급건각등수거게시 fcc위갑완흡부대체계규정포유흔대적영향,기체계적건능최저,즉차시체계결구최은정。본문소득연구성과가용우 Si표면대갑완기체적민감성분석급기체전감기영역。
The physical adsorption behavior of methane on Si (111)surface was investigated using first-principles calculations based on density-functional theory and ultrasoft pseudopotentials.To compara-tively analyze the adsorbing characteristics of methane,different adsorbing positions of Si (111)surface had been structured to figure out the more optimal absorbing position.In the paper,we set up three dif-ferent positions (top,bridge,fcc)of the adsorbing model.The interface structures changes were evi-denced by the bond structure,adsorption energy and density of states.The adsorption energy of meth-ane shows the fcc position is a favorite point for physical adsorption on Si (1 1 1 )surface.The data of density of states and bond structure clearly reveal that methane adsorbed on the fcc position of Si (111) which is with a lower adsorbing energy give a significant effect on the molecular structure of CH4/Si mixture.The obtained data and conclusion in this paper will be applied in the fields of the sensitive to methane of silicon surface and gas sensor technology.