CAJ | 학술논문

针对低噪声放大器实际电路往往和仿真结果出入较大、调试困难等特征，以 TRL 校准件和芯片量测板为平台量测出芯片的 S 参数，通过和厂商提供的 S 参数比拟，在此基础上通过射频仿真软件设计出的低噪声放大器，在实际测试中和仿真结果比较接近，大大提高了低噪声放大器设计的效率和性能。最后以 GPS 和北斗为例，给出了实测和仿真的 S 参数Smith 圆图比对结果。
침대저조성방대기실제전로왕왕화방진결과출입교대、조시곤난등특정，이 TRL 교준건화심편량측판위평태량측출심편적 S 삼수，통과화엄상제공적 S 삼수비의，재차기출상통과사빈방진연건설계출적저조성방대기，재실제측시중화방진결과비교접근，대대제고료저조성방대기설계적효솔화성능。최후이 GPS 화북두위례，급출료실측화방진적 S 삼수Smith 원도비대결과。
As the difference between the software simulation results and actual circuit results of low noise amplifiers, it is hard to debug the hardware system. In this paper, a new method is proposed to solve this problem. The S parameters can be measured by TRL calibration and chip measuring board platform. Through comparing it with S parameters supported by vendor, low noise amplifiers can be desiged by RF simulation software. In this way, the simulation results and actual test results are closer, which greatly improves the efficiency and performance of the low noise amplifier design. Finally it take GPS and Bei-Dou as examples, and the S parameters of measured and simulated Smith chart are compared.