CAJ | 학술논문

提出了用理想因子n作为表征，对双极晶体管的贮存寿命进行评估的新方法。以某型双极晶体管为研究对象，进行了3组不同温、湿度恒定应力的加速退化试验，分析了随试验时间的增加双极晶体管样品的性能参数退化的原因。通过设定失效判据，利用晶体管样品在小电流情况下PN结的理想因子的退化趋势外推出双极晶体管的贮存寿命，并与通过反向漏电流的退化趋势预测得到的贮存寿命结果进行了对比。结果证明，晶体管PN结的理想因子退化也可以作为晶体管贮存寿命的一种表征，从而对晶体管的贮存可靠性进行评估。
제출료용이상인자n작위표정，대쌍겁정체관적저존수명진행평고적신방법。이모형쌍겁정체관위연구대상，진행료3조불동온、습도항정응력적가속퇴화시험，분석료수시험시간적증가쌍겁정체관양품적성능삼수퇴화적원인。통과설정실효판거，이용정체관양품재소전류정황하PN결적이상인자적퇴화추세외추출쌍겁정체관적저존수명，병여통과반향루전류적퇴화추세예측득도적저존수명결과진행료대비。결과증명，정체관PN결적이상인자퇴화야가이작위정체관저존수명적일충표정，종이대정체관적저존가고성진행평고。
A new method is proposed,which uses the ideality factor n as characterization to assess the storage lifetime of bipolar transistors.Choosing one bipolar transistors as the study object,three group ac-celerating degradation tests are conducted in the different temperature-humidity constant stresses.The re-search analyzed why the performance parameters of transistor samples degraded with the test time passing. By setting the failure criterion,the storage lifetime was extrapolated from the degradation trend of ideality factor PN junction in the small current,which was compared with that from the reverse leakage current. The findings prove the ideality factor PN junction can be taken as a characterization to evaluate the tran-sistor storage reliability.