电子器件
電子器件
전자기건
JOURNAL OF ELECTRON DEVICES
2014年
4期
597-600
,共4页
场效应管%碳纳米管阵列%场发射%栅极调控
場效應管%碳納米管陣列%場髮射%柵極調控
장효응관%탄납미관진렬%장발사%책겁조공
field effect transistor%carbon nanotubes array%field emission%gate modulation
针对目前碳纳米管场发射电子源存在的问题，以提高碳纳米管场发射阵列的大电流发射能力、电流均匀性和稳定性以及电流调制灵敏度为目标，基于绝缘硅( SOI)技术，提出并制备出一种独立场效应管控制的碳纳米管场发射阵列三极结构，并通过理论分析和实验验证等手段，发现其具有良好的栅极调制效果、优良的发射均匀性和稳定性。
針對目前碳納米管場髮射電子源存在的問題，以提高碳納米管場髮射陣列的大電流髮射能力、電流均勻性和穩定性以及電流調製靈敏度為目標，基于絕緣硅( SOI)技術，提齣併製備齣一種獨立場效應管控製的碳納米管場髮射陣列三極結構，併通過理論分析和實驗驗證等手段，髮現其具有良好的柵極調製效果、優良的髮射均勻性和穩定性。
침대목전탄납미관장발사전자원존재적문제，이제고탄납미관장발사진렬적대전류발사능력、전류균균성화은정성이급전류조제령민도위목표，기우절연규( SOI)기술，제출병제비출일충독립장효응관공제적탄납미관장발사진렬삼겁결구，병통과이론분석화실험험증등수단，발현기구유량호적책겁조제효과、우량적발사균균성화은정성。
Carbon nanotube cold cathodes have promising applications, however, their electron emission ability, emission current uniformity and stability,and sensitivity of gate modulation still can not satisfy the requests of large power devices. To improve above performances of carbon nanotubes array, this project presents an Individually Transistor-Ballasted Back-Gate Carbon Nanotube Arrays on SOI(silicon on insulator)substrate. Then through the computer simulation and theory analysis,we prove that this triod structure has the gate modulation,good emission uniformity and stability.
