长春理工大学学报(自然科学版)
長春理工大學學報(自然科學版)
장춘리공대학학보(자연과학판)
JOURNAL OF CHANGCHUN UNIVERSITY OF SCIENCE AND TECHNOLOGY(NATURAL SCIENCE EDITION)
2014年
4期
99-103
,共5页
马尧%王小月%黄虎%吕扬%赵宏伟
馬堯%王小月%黃虎%呂颺%趙宏偉
마요%왕소월%황호%려양%조굉위
单晶硅%纳米压痕%有限元仿真%加%卸载响应特性%微观力学性能
單晶硅%納米壓痕%有限元倣真%加%卸載響應特性%微觀力學性能
단정규%납미압흔%유한원방진%가%사재향응특성%미관역학성능
monocrystal silicon%nanoindentation%finite element simulation%response chatacteristics during loading and unloading%microscopic mechanical property
本文采用各向异性弹塑性材料本构关系,利用非线性有限元软件MSC.Marc建立了单晶硅纳米压痕过程的三维模型,分别用玻氏、维氏、圆锥形和球形压头对单晶硅(100)晶面进行了纳米压痕过程的仿真分析,研究了单晶硅对于不同形状的压头、不同压头半锥角、不同最大加载力的加、卸载响应特性。仿真结果表明,压入相同深度时,圆锥形压头所需载荷最小,材料对圆锥形和球形压入产生的应力应变分布呈现出各向异性,体现了单晶硅在不同晶向上的材料性能存在差异。当最大加载力为25mN时,仿真得出维氏压头在单晶硅(100)晶面产生的压痕深度约为300nm,与相应实验结果基本相符。
本文採用各嚮異性彈塑性材料本構關繫,利用非線性有限元軟件MSC.Marc建立瞭單晶硅納米壓痕過程的三維模型,分彆用玻氏、維氏、圓錐形和毬形壓頭對單晶硅(100)晶麵進行瞭納米壓痕過程的倣真分析,研究瞭單晶硅對于不同形狀的壓頭、不同壓頭半錐角、不同最大加載力的加、卸載響應特性。倣真結果錶明,壓入相同深度時,圓錐形壓頭所需載荷最小,材料對圓錐形和毬形壓入產生的應力應變分佈呈現齣各嚮異性,體現瞭單晶硅在不同晶嚮上的材料性能存在差異。噹最大加載力為25mN時,倣真得齣維氏壓頭在單晶硅(100)晶麵產生的壓痕深度約為300nm,與相應實驗結果基本相符。
본문채용각향이성탄소성재료본구관계,이용비선성유한원연건MSC.Marc건립료단정규납미압흔과정적삼유모형,분별용파씨、유씨、원추형화구형압두대단정규(100)정면진행료납미압흔과정적방진분석,연구료단정규대우불동형상적압두、불동압두반추각、불동최대가재력적가、사재향응특성。방진결과표명,압입상동심도시,원추형압두소수재하최소,재료대원추형화구형압입산생적응력응변분포정현출각향이성,체현료단정규재불동정향상적재료성능존재차이。당최대가재력위25mN시,방진득출유씨압두재단정규(100)정면산생적압흔심도약위300nm,여상응실험결과기본상부。
Anisotropic elastic-plastic constitutive relation was used in this paper for establishing a three-dimensional model about nanoindentation process on monocrystal silicon by the non-linear finite element software MSC.Marc. The nanoindentation simulations were performed using Berkovich,Vicker,conical and spherical indenters on monocrystal sili-con (100) plane to study the response chatacteristics of the monocrystal silicon for different indenter geometries,differ-ent half-angle of conical indenters and different maximal loads during loading and unloading.The results show that, for the same indentation depth,the applied load was the lowest in the case with conical indenter,the stress and strain dis-tributions of conical and spherical indentation presented anisotropic that reflected the material properties of monocrystal silicon are disparate in different crystal orientation. For a given maximal indent loads of 25mN, the Vickers indenter generated a indentation depth of 300nm in the simulation which was close to the corresponding experiment result.