发光学报
髮光學報
발광학보
CHINESE JOURNAL OF LUMINESCENCE
2014年
7期
840-845
,共6页
田超%梁静秋%梁中翥%秦余欣%李春%吕金光%王维彪
田超%樑靜鞦%樑中翥%秦餘訢%李春%呂金光%王維彪
전초%량정추%량중저%진여흔%리춘%려금광%왕유표
AlGaInP%回型电极%微型阵列%热效应%热沉结构
AlGaInP%迴型電極%微型陣列%熱效應%熱沉結構
AlGaInP%회형전겁%미형진렬%열효응%열침결구
AlGaInP%square-circle electrode%micro-arrays%thermal analysis%heat-sink structure
对AlGaInP-LED微型阵列发光单元的内部自发热机制进行了分析,并通过对具有回型上电极的发光单元的理论分析与计算,得到了其内量子效率与注入电流的变化关系及器件温度与所加偏压的变化关系。为保证内量子效率取值范围大于85%,得到了器件的最佳工作电流和最佳驱动电压范围以及微阵列各层结构在最佳驱动电压下的热阻分布。通过计算得出器件在2.2 V电压下,从p-n结到外部环境的有效热阻为96.7益/W。讨论了减小器件热阻的方法,计算得出在理想情况下,添加热沉结构后有效热阻降为30.6益/W,表明所设计的热沉结构对器件的散热起到了明显的改善作用。
對AlGaInP-LED微型陣列髮光單元的內部自髮熱機製進行瞭分析,併通過對具有迴型上電極的髮光單元的理論分析與計算,得到瞭其內量子效率與註入電流的變化關繫及器件溫度與所加偏壓的變化關繫。為保證內量子效率取值範圍大于85%,得到瞭器件的最佳工作電流和最佳驅動電壓範圍以及微陣列各層結構在最佳驅動電壓下的熱阻分佈。通過計算得齣器件在2.2 V電壓下,從p-n結到外部環境的有效熱阻為96.7益/W。討論瞭減小器件熱阻的方法,計算得齣在理想情況下,添加熱沉結構後有效熱阻降為30.6益/W,錶明所設計的熱沉結構對器件的散熱起到瞭明顯的改善作用。
대AlGaInP-LED미형진렬발광단원적내부자발열궤제진행료분석,병통과대구유회형상전겁적발광단원적이론분석여계산,득도료기내양자효솔여주입전류적변화관계급기건온도여소가편압적변화관계。위보증내양자효솔취치범위대우85%,득도료기건적최가공작전류화최가구동전압범위이급미진렬각층결구재최가구동전압하적열조분포。통과계산득출기건재2.2 V전압하,종p-n결도외부배경적유효열조위96.7익/W。토론료감소기건열조적방법,계산득출재이상정황하,첨가열침결구후유효열조강위30.6익/W,표명소설계적열침결구대기건적산열기도료명현적개선작용。
The principle of self-heating effect of AlGaInP micro-LED cells was analyzed. By analyzing the temperature distribution of each cell with square-circle electrode, the relationships of the internal quantum efficiency vs. anode current and the lattice device temperature vs. anode voltage were got. Un-der 2. 2 V driving voltage, the thermal impedance of each layer was calculated and the effective thermal impedance was obtained as 96. 7℃/W. After adding heat-sink to the device, the thermal impedance of the device with heat-sink structure was as low as 30. 6℃/W in ideal condition. The results show that the thermal performance can be improved obviously with the designed heat-sink structure.