CAJ | 학술논문

利用金属有机化学气相沉积(MOCVD)设备,在蓝宝石(0001)面上外延不同生长时间AlN隔离层的Alx Ga1-x N/AlN/GaN结构的高电子迁移率的晶体管( HEMT),研究了AlN隔离层厚度对HEMT材料电学性能的影响。研究发现采用脉冲法外延(PALE)技术生长AlN隔离层的时间为12 s(1 nm左右)时,HEMT材料的方块电阻最小,电子迁移率为1500 cm2·V-1·s-1,二维电子气(2DEG)浓度为1.16伊1013 cm-2。 AFM测试结果表明,一定厚度范围内的AlN隔离层并不会对材料的表面形貌产生重大的影响。 HRXRD测试结果表明,AlGaN/AlN/GaN具有好的异质结界面。
이용금속유궤화학기상침적(MOCVD)설비,재람보석(0001)면상외연불동생장시간AlN격리층적Alx Ga1-x N/AlN/GaN결구적고전자천이솔적정체관( HEMT),연구료AlN격리층후도대HEMT재료전학성능적영향。연구발현채용맥충법외연(PALE)기술생장AlN격리층적시간위12 s(1 nm좌우)시,HEMT재료적방괴전조최소,전자천이솔위1500 cm2·V-1·s-1,이유전자기(2DEG)농도위1.16이1013 cm-2。 AFM측시결과표명,일정후도범위내적AlN격리층병불회대재료적표면형모산생중대적영향。 HRXRD측시결과표명,AlGaN/AlN/GaN구유호적이질결계면。
AlGaN/AlN/GaN HEMT structures were grown on sapphire substrate by MOCVD with dif-ferent AlN growing time, and the influence of AlN thickness on electrical properties was investiga-ted. When AlN growth time is about 12 s corresponding to the AlN thickness of 1 ~1. 5 nm, the sample has the best performance of electrical properties with the lowest sheet resistance of 359 Ω· sq-1 , the highest 2DEG concentration of 1. 16í1013 cm-2 , and a high 2DEG mobility of 1 500 cm2 · V-1 ·s-1 . AFM results indicate that AlN layer within a certain thickness range has little influence on the surface morphology. HRXRD results show that AlGaN/AlN/GaN HEMT has a good hetero-structure interface.