发光学报
髮光學報
발광학보
CHINESE JOURNAL OF LUMINESCENCE
2014年
7期
795-799
,共5页
赵鹏程%张振中%姚斌%李炳辉%王双鹏%姜明明%赵东旭%单崇新%刘雷%申德振
趙鵬程%張振中%姚斌%李炳輝%王雙鵬%薑明明%趙東旭%單崇新%劉雷%申德振
조붕정%장진중%요빈%리병휘%왕쌍붕%강명명%조동욱%단숭신%류뢰%신덕진
ZnO%B/N共掺%p型掺杂
ZnO%B/N共摻%p型摻雜
ZnO%B/N공참%p형참잡
ZnO%B/N codoped%stable p-type conduction
利用分子束外延设备在蓝宝石衬底上生长了B/N共掺的p型ZnO薄膜,对比了B/N共掺和N单掺杂样品的物理学性能。通过X射线光电子能谱测试证明了在薄膜中存在有B和B-N键。 B/N共掺样品的空穴浓度比单一N掺杂样品高近两个量级。且ZnO.( B,N)薄膜在两年多的时间内一直显示稳定的p型电导。这是由于B-N键的存在提高了N在ZnO薄膜中的固溶度,且B-N键之间强的键能和B占据Zn位所表现的弱施主特性不会带来强的施主补偿效应,说明B是N掺杂ZnO薄膜的一种良好的共掺元素。
利用分子束外延設備在藍寶石襯底上生長瞭B/N共摻的p型ZnO薄膜,對比瞭B/N共摻和N單摻雜樣品的物理學性能。通過X射線光電子能譜測試證明瞭在薄膜中存在有B和B-N鍵。 B/N共摻樣品的空穴濃度比單一N摻雜樣品高近兩箇量級。且ZnO.( B,N)薄膜在兩年多的時間內一直顯示穩定的p型電導。這是由于B-N鍵的存在提高瞭N在ZnO薄膜中的固溶度,且B-N鍵之間彊的鍵能和B佔據Zn位所錶現的弱施主特性不會帶來彊的施主補償效應,說明B是N摻雜ZnO薄膜的一種良好的共摻元素。
이용분자속외연설비재람보석츤저상생장료B/N공참적p형ZnO박막,대비료B/N공참화N단참잡양품적물이학성능。통과X사선광전자능보측시증명료재박막중존재유B화B-N건。 B/N공참양품적공혈농도비단일N참잡양품고근량개량급。차ZnO.( B,N)박막재량년다적시간내일직현시은정적p형전도。저시유우B-N건적존재제고료N재ZnO박막중적고용도,차B-N건지간강적건능화B점거Zn위소표현적약시주특성불회대래강적시주보상효응,설명B시N참잡ZnO박막적일충량호적공참원소。
A stable and repeatable p-type ZnO is the key to realize the practical applications of photoe-lectric devices. Nitrogen has been considered as a possible acceptor dopant for p-type ZnO for a long time. However, the low solubility of nitrogen acceptor at oxygen site in ZnO is considered to be one of the main obstacles for p-type ZnO. In this paper, B/N co-doped p-type ZnO thin films were grown on sapphire substrate by plasma-assisted molecular beam epitaxy. The effect of boron on the nitrogen doping was studied by comparing with the single nitrogen doped thin films. X-ray photoelectron spectroscopy demonstrated there exists boron and B-N bond in the ZnO thin film. Compared to the single N-doped sample, B/N codoped samples present much higher carrier density. And the ZnO:(B,N) thin films show stable p-type conduction in two years. It is attributed to the increase of solubility of nitrogen accep-tor. It benefits from the strong B-N bonding and weak donor character of boron at zinc site. Boron will not bring strong compensation for acceptors. It suggests that boron is a good co-doping candidate for ni-trogen doped ZnO thin films.
