CAJ | 학술논문

根据绝大多数分立器件的技术要求，常规硅外延层电阻率的数值会小于厚度的数值。介绍了一种外延层电阻率数值接近甚至大于厚度数值的高阻薄层硅外延材料的实用生产技术，即在PE-2061S桶式外延设备上，采取特殊的工艺方法，在掺砷（As）衬底上进行高阻薄层外延生长。该工艺通过控制自掺杂，改善了纵向载流子浓度分布，取得了较好的外延参数均匀性。
근거절대다수분립기건적기술요구，상규규외연층전조솔적수치회소우후도적수치。개소료일충외연층전조솔수치접근심지대우후도수치적고조박층규외연재료적실용생산기술，즉재PE-2061S통식외연설비상，채취특수적공예방법，재참신（As）츤저상진행고조박층외연생장。해공예통과공제자참잡，개선료종향재류자농도분포，취득료교호적외연삼수균균성。
According to the technical requirements of the vast majority of discrete devices, the resistivity of conventional silicon epitaxial layer is lower than the value of the thickness. The paper introduces the practical production technology of a kind of high resistance thin thickness silicon epitaxial material whose resistivity value is close to or even higher than the thickness, namely high resistance thin thickness silicon epitaxial growth on the substrate doped. As with the special process method on the PE-2061s barrel type equipment. Through controlling the auto-doping,the process improves the vertical distribution of carriers concentration and obtains better uniformity of epitaxial parameters.