CAJ | 학술논문

利用溶胶-凝胶法在 LaNiO3/SiO2/Si 衬底上分别制备出0.7BiFeO3-0.3PbTiO3(BFPT7030), PbTiO3(PT)-BFPT7030(BFPT7030-1、BFPT7030-2)薄膜。通过对薄膜进行XRD、AFM测试可知,薄膜均完全结晶,并呈现高度(100)择优取向,3种薄膜的表面平整,均方根粗糙度较小。通过介电性能、铁电性能及漏电流测试结果可知,增加有 PT 缓冲层的 BF-PT7030薄膜的介电性能、铁电性能有所改善,漏电流较小。其中 BFPT7030-2薄膜的剩余极化最大,达到38μC/cm2。
이용용효-응효법재 LaNiO3/SiO2/Si 츤저상분별제비출0.7BiFeO3-0.3PbTiO3(BFPT7030), PbTiO3(PT)-BFPT7030(BFPT7030-1、BFPT7030-2)박막。통과대박막진행XRD、AFM측시가지,박막균완전결정,병정현고도(100)택우취향,3충박막적표면평정,균방근조조도교소。통과개전성능、철전성능급루전류측시결과가지,증가유 PT 완충층적 BF-PT7030박막적개전성능、철전성능유소개선,루전류교소。기중 BFPT7030-2박막적잉여겁화최대,체도38μC/cm2。
Thin films of 0.7BiFeO3-0.3PbTiO3 (BFPT7030 ),PbTiO3 (PT)-BFPT7030 (BFPT7030-1,BF-PT7030-2)were prepared on LaNiO3/SiO2/Si substrate by sol-gel process.The test results of XRD and AFM show that the thin films were fully crystalized and reveal highly (100)preferred orientation.These thin films demonstrate smooth surface and the root-mean-squares (RMS)are small.The BFPT7030 thin films with PT buffer layer have improvement dielectric and ferroelectric properties from the test results,and the leakage cur-rent was less than the BFPT7030 thin film without PT buffer layer.The film of BFPT7030-2 demonstrate the largest remnant polarization of 38μC/cm2 .