天津大学学报（英文版）
天津大學學報（英文版）
천진대학학보（영문판）
TRANSACTIONS OF TIANJIN UNIVERSITY
2014年
4期
299-309
,共11页
张为%宋博%付军%王玉东%崔杰%李高庆%张伟%刘志弘
張為%宋博%付軍%王玉東%崔傑%李高慶%張偉%劉誌弘
장위%송박%부군%왕옥동%최걸%리고경%장위%류지홍
wideband%dual-feedback%low noise amplifier (LNA)%SiGe heterojunction bipolar transistor
A wideband dual-feedback low noise amplifier (LNA) was analyzed, designed and implemented using SiGe heterojunction bipolar transistor (HBT) technology. The design analysis in terms of gain, input and output matching, noise and poles for the amplifier was presented in detail. The area of the complete chip die, including bond-ing pads and seal ring, was 655μm×495μm. The on-wafer measurements on the fabricated wideband LNA sample demonstrated good performance:a small-signal power gain of 33 dB with 3-dB bandwidth at 3.3 GHz was achieved;the input and output return losses were better than-10 dB from 100 MHz to 4 GHz and to 6 GHz, respectively;the noise figure was lower than 4.25 dB from 100 MHz to 6 GHz;with a 5 V supply, the values of OP1dB and OIP3 were 1.7 dBm and 11 dBm at 3-dB bandwidth, respectively.
