CAJ | 학술논문

利用微波等离子体化学气相沉积(MPCVD)法，在 CH 4/H 2的混合反应气源中加入 N2进行了金刚石膜的沉积实验，详细研究了 N2浓度对金刚石膜生长的影响规律。使用扫描电子显微镜、激光拉曼光谱仪和 X 射线衍射仪等设备，表征了金刚石薄膜的表面形貌、相组成及晶面取向。实验结果表明：随着 N2体积分数的增加(由0%增加到6%)，薄膜中的非金刚石相含量逐渐增大，金刚石晶粒尺寸逐渐减小，晶面取向也由较大的晶面(111)转变成较小的晶面(100)；当 N2体积分数为4%时，沉积的金刚石膜表面为“菜花”状结构；低体积分数(2%)的 N2有利于获得高度取向(100)的金刚石膜。
이용미파등리자체화학기상침적(MPCVD)법，재 CH 4/H 2적혼합반응기원중가입 N2진행료금강석막적침적실험，상세연구료 N2농도대금강석막생장적영향규률。사용소묘전자현미경、격광랍만광보의화 X 사선연사의등설비，표정료금강석박막적표면형모、상조성급정면취향。실험결과표명：수착 N2체적분수적증가(유0%증가도6%)，박막중적비금강석상함량축점증대，금강석정립척촌축점감소，정면취향야유교대적정면(111)전변성교소적정면(100)；당 N2체적분수위4%시，침적적금강석막표면위“채화”상결구；저체적분수(2%)적 N2유리우획득고도취향(100)적금강석막。
Diamond films deposition were implemented through microwave plasma chemical vapor deposition (MPCVD)method using mixed gas of CH 4/H 2/N2 .Influence of N2 on diamond films was studied in detail.Scanning electron microscope (SEM),laser Raman spectroscopy and X-ray diffraction (XRD)were used to observe the surface morphology,the phase composition and the crystal orientation of diamond films.Results showed that the content of amorphous diamond phase in the film increased with the enlargement of N2 volume concentration (from 0% to 6%),but the diamond grain size presented a downward trend.Meanwhile, the crystal orientation of larger (1 1 1 ) crystal plane transforms into smaller (100 )crystal plane.It is more conducive to obtain diamond films with high (100)crystal plane under a relatively low N2 concentration(about 2%),while it turns up a kind of"cauliflower" structure when N2 concentration was 4%.