中国有色金属学报
中國有色金屬學報
중국유색금속학보
THE CHINESE JOURNAL OF NONFERROUS METALS
2014年
8期
2013-2019
,共7页
颜建辉%徐健建%刘龙飞%毛征宇%王跃明%许宁
顏建輝%徐健建%劉龍飛%毛徵宇%王躍明%許寧
안건휘%서건건%류룡비%모정우%왕약명%허저
MoSi 2%Al合金化%氧化膜%氧化行为
MoSi 2%Al閤金化%氧化膜%氧化行為
MoSi 2%Al합금화%양화막%양화행위
MoSi2%Al alloying%oxide scale%oxidation behavior
以MoSi 2、Mo和Al粉末为原料,采用真空热压烧结制备不同Al含量的Mo(Si 1-x ,Al x )2材料,考察Al含量对MoSi 2材料微观结构和高温氧化行为的影响。结果表明,当x=0和0.05时,Mo(Si 1-x ,Al x )2材料主要由呈C11b结构的MoSi2组成;当x=0.1时,该材料主要由呈C40结构的Mo(Si0.9,Al0.1)2和MoSi2组成;当x=0.2~0.4时,该材料由呈C40结构的Mo(Si1-x,Alx)2相组成。随着Al含量的增加,Mo(Si,Al)2晶格膨胀增大。1200℃氧化时,不同Al含量Mo(Si 1-x ,Al x )2材料的氧化动力学均呈抛物线规律;Mo(Si,Al)2中Al含量越高,氧化增量越大,抗氧化能力越低。当x=0和0.05时,材料表面氧化生成了连续致密的SiO 2氧化膜;当x=0.1时,氧化层由SiO 2?Al 2 O 3混合氧化膜组成;当x=0.2~0.4时,材料表面氧化生成连续的Al 2 O 3氧化膜。由于Si和Al的扩散,氧化膜与Mo(Si 1-x ,Al x )2界面处形成了Mo 5(Si,Al)3过渡区。
以MoSi 2、Mo和Al粉末為原料,採用真空熱壓燒結製備不同Al含量的Mo(Si 1-x ,Al x )2材料,攷察Al含量對MoSi 2材料微觀結構和高溫氧化行為的影響。結果錶明,噹x=0和0.05時,Mo(Si 1-x ,Al x )2材料主要由呈C11b結構的MoSi2組成;噹x=0.1時,該材料主要由呈C40結構的Mo(Si0.9,Al0.1)2和MoSi2組成;噹x=0.2~0.4時,該材料由呈C40結構的Mo(Si1-x,Alx)2相組成。隨著Al含量的增加,Mo(Si,Al)2晶格膨脹增大。1200℃氧化時,不同Al含量Mo(Si 1-x ,Al x )2材料的氧化動力學均呈拋物線規律;Mo(Si,Al)2中Al含量越高,氧化增量越大,抗氧化能力越低。噹x=0和0.05時,材料錶麵氧化生成瞭連續緻密的SiO 2氧化膜;噹x=0.1時,氧化層由SiO 2?Al 2 O 3混閤氧化膜組成;噹x=0.2~0.4時,材料錶麵氧化生成連續的Al 2 O 3氧化膜。由于Si和Al的擴散,氧化膜與Mo(Si 1-x ,Al x )2界麵處形成瞭Mo 5(Si,Al)3過渡區。
이MoSi 2、Mo화Al분말위원료,채용진공열압소결제비불동Al함량적Mo(Si 1-x ,Al x )2재료,고찰Al함량대MoSi 2재료미관결구화고온양화행위적영향。결과표명,당x=0화0.05시,Mo(Si 1-x ,Al x )2재료주요유정C11b결구적MoSi2조성;당x=0.1시,해재료주요유정C40결구적Mo(Si0.9,Al0.1)2화MoSi2조성;당x=0.2~0.4시,해재료유정C40결구적Mo(Si1-x,Alx)2상조성。수착Al함량적증가,Mo(Si,Al)2정격팽창증대。1200℃양화시,불동Al함량Mo(Si 1-x ,Al x )2재료적양화동역학균정포물선규률;Mo(Si,Al)2중Al함량월고,양화증량월대,항양화능력월저。당x=0화0.05시,재료표면양화생성료련속치밀적SiO 2양화막;당x=0.1시,양화층유SiO 2?Al 2 O 3혼합양화막조성;당x=0.2~0.4시,재료표면양화생성련속적Al 2 O 3양화막。유우Si화Al적확산,양화막여Mo(Si 1-x ,Al x )2계면처형성료Mo 5(Si,Al)3과도구。
Mo(Si1-x,Alx)2 material was fabricated by hot press sintering using MoSi2, Mo and Al powders as raw materials. The effects of alloying element Al on the microstructure and high temperature oxidation behaviors of MoSi2 were investigated. The results show that the Mo(Si1-x,Alx)2 material mainly contains MoSi2 with C11b tetragonal structure at x of 0 and 0.05. At x of 0.1, the mixture phases of hexagonal C40 Mo(Si,Al) 2 and MoSi 2 are detected. Only hexagonal C40 Mo(Si,Al)2 phase is found when the Al content x changes from 0.2 to 0.4. The lattice of each structure generally expands with increasing the substitution ratio of Al. The oxidation kinetics of all materials at 1200℃follows a parabolic rate law. The higher the Al content in Mo(Si,Al) 2 is, the more the mass gain of Mo(Si,Al) 2 is, and the lower the oxidation resistance is. A dense and continuous SiO2 scale forms on the surface of both MoSi2 and Mo(Si0.95,Al0.05)2. The oxide scale comprises of SiO2 and Al2O3 in Mo(Si0.9,Al0.1)2 material, and the Al2O3 oxide scale forms on the surface of Mo(Si0.8,Al0.2)2, Mo(Si0.7,Al0.3)2 and Mo(Si0.6,Al0.4)2 materials. The Mo5(Si,Al)3 transition layer is found between the boundary of oxide scale and the Mo(Si,Al) 2 substrate because of the diffusion of Si and Al elements.