CAJ | 학술논문

为了实现808 nm 垂直腔面发射激光器(VCSEL)的高功率输出，对808 nm VCSEL 的分布式布拉格反射镜(DBR)结构材料进行了优化设计，分析了 Alx Ga1- x As 材料中 Al 组分对于折射率与吸收的影响，并最终确定了材料。采用非闭合环结构制备了2×2 VCSEL 列阵。通过波形分析法对 VCSEL 列阵的功率进行了测量：在脉冲宽度为20 ns、重复频率为100 Hz、注入电流为110 A 的条件下，最大峰值功率为30 W；在脉冲宽度为60 ns、重复频率为100 Hz、注入电流为30 A 的条件下，最大功率为9 W。对列阵的近场和远场进行了测量，激光器垂直发散角和水平发散角半高全宽分别为16.9°和17.6°。
위료실현808 nm 수직강면발사격광기(VCSEL)적고공솔수출，대808 nm VCSEL 적분포식포랍격반사경(DBR)결구재료진행료우화설계，분석료 Alx Ga1- x As 재료중 Al 조분대우절사솔여흡수적영향，병최종학정료재료。채용비폐합배결구제비료2×2 VCSEL 렬진。통과파형분석법대 VCSEL 렬진적공솔진행료측량：재맥충관도위20 ns、중복빈솔위100 Hz、주입전류위110 A 적조건하，최대봉치공솔위30 W；재맥충관도위60 ns、중복빈솔위100 Hz、주입전류위30 A 적조건하，최대공솔위9 W。대렬진적근장화원장진행료측량，격광기수직발산각화수평발산각반고전관분별위16.9°화17.6°。
In order to achieve high output power of 808 nm vertical cavity surface emitting laser (VCSEL) array, the DBR material of 808 nm VCSEL was optimized, and Al content of Alx Ga1 - x As was analyzed for the influence on refractive index and absorption. Based on the above analysis, 2 × 2 VCSEL array was designed and fabricated with non-closed ring structure. The peak power of the VCSEL array was tested under waveform analysis method. The peak power is 30 W in 60 ns pulse width and 100 Hz repetition rate, and 9 W in 20 ns pulse width and 100 Hz repetition rate, respec-tively. The near-field and far-field of VCSEL array were also measured. The beam divergences with full-width at half maximum are 16. 9° and 17. 6° in the vertical and lateral directions, respectively.