光谱学与光谱分析
光譜學與光譜分析
광보학여광보분석
SPECTROSCOPY AND SPECTRAL ANALYSIS
2014年
9期
2355-2359
,共5页
吕珊珊%方铉%王佳琦%方芳%赵海峰%楚学影%李金华%房丹%唐吉龙%魏志鹏%马晓辉%王晓华%浦双双%徐莉
呂珊珊%方鉉%王佳琦%方芳%趙海峰%楚學影%李金華%房丹%唐吉龍%魏誌鵬%馬曉輝%王曉華%浦雙雙%徐莉
려산산%방현%왕가기%방방%조해봉%초학영%리금화%방단%당길룡%위지붕%마효휘%왕효화%포쌍쌍%서리
溶胶-凝胶%MgxZn1 - xO/Au/MgxZn1 - xO%退火温度
溶膠-凝膠%MgxZn1 - xO/Au/MgxZn1 - xO%退火溫度
용효-응효%MgxZn1 - xO/Au/MgxZn1 - xO%퇴화온도
Sol-gel%MgxZn1 - xO/Au/MgxZn1 - xO%Annealing temperature
采用操作简单的溶胶-凝胶法和射频磁控溅射法在石英衬底上分别制备了 MgxZn1- xO薄膜和MgxZn1- xO/Au/MgxZn1- xO夹层结构的透明导电薄膜并对样品进行退火处理。利用紫外-可见分光光度计、X射线衍射仪、光致发光、霍尔效应测试对在不同退火温度下薄膜的晶体结构、光学和电学性质进行表征分析，并研究退火温度对其影响。测试结果表明：所制备的薄膜样品均具有良好的c轴（c-axis）取向并呈现出六角纤锌矿结构。Mg组分的增加使得ZnO基薄膜的光学带隙逐渐增大，PL发光谱和吸收光谱的谱线出现了明显的蓝移现象，但薄膜的电学特性有所降低。而在MgxZn1- xO/Au/MgxZn1- x O夹层结构的薄膜样品中，Au夹层的存在使薄膜的光学性质变差，在紫外区域透光率约为60％。但薄膜的电学性质得到明显改善，相比MgxZn1- xO薄膜，其电阻率和迁移率显著提高。此外通过高温退火处理可以有效提高所制备薄膜的晶体质量，进一步提高样品电学特性，其中经过500℃退火后的薄膜迁移率达到了40.9 cm2· V s-1，电阻率为0.0057Ω· cm。但随着退火温度的进一步升高，薄膜晶体尺寸从25.1 nm增大到32.4 nm ，从而降低了该薄膜的迁移率。因此该夹层结构的MgxZn1- xO/Au/MgxZn1- xO薄膜对于促进ZnO基透明导电薄膜在深紫外光学器件中的应用有重要作用。
採用操作簡單的溶膠-凝膠法和射頻磁控濺射法在石英襯底上分彆製備瞭 MgxZn1- xO薄膜和MgxZn1- xO/Au/MgxZn1- xO夾層結構的透明導電薄膜併對樣品進行退火處理。利用紫外-可見分光光度計、X射線衍射儀、光緻髮光、霍爾效應測試對在不同退火溫度下薄膜的晶體結構、光學和電學性質進行錶徵分析，併研究退火溫度對其影響。測試結果錶明：所製備的薄膜樣品均具有良好的c軸（c-axis）取嚮併呈現齣六角纖鋅礦結構。Mg組分的增加使得ZnO基薄膜的光學帶隙逐漸增大，PL髮光譜和吸收光譜的譜線齣現瞭明顯的藍移現象，但薄膜的電學特性有所降低。而在MgxZn1- xO/Au/MgxZn1- x O夾層結構的薄膜樣品中，Au夾層的存在使薄膜的光學性質變差，在紫外區域透光率約為60％。但薄膜的電學性質得到明顯改善，相比MgxZn1- xO薄膜，其電阻率和遷移率顯著提高。此外通過高溫退火處理可以有效提高所製備薄膜的晶體質量，進一步提高樣品電學特性，其中經過500℃退火後的薄膜遷移率達到瞭40.9 cm2· V s-1，電阻率為0.0057Ω· cm。但隨著退火溫度的進一步升高，薄膜晶體呎吋從25.1 nm增大到32.4 nm ，從而降低瞭該薄膜的遷移率。因此該夾層結構的MgxZn1- xO/Au/MgxZn1- xO薄膜對于促進ZnO基透明導電薄膜在深紫外光學器件中的應用有重要作用。
채용조작간단적용효-응효법화사빈자공천사법재석영츤저상분별제비료 MgxZn1- xO박막화MgxZn1- xO/Au/MgxZn1- xO협층결구적투명도전박막병대양품진행퇴화처리。이용자외-가견분광광도계、X사선연사의、광치발광、곽이효응측시대재불동퇴화온도하박막적정체결구、광학화전학성질진행표정분석，병연구퇴화온도대기영향。측시결과표명：소제비적박막양품균구유량호적c축（c-axis）취향병정현출륙각섬자광결구。Mg조분적증가사득ZnO기박막적광학대극축점증대，PL발광보화흡수광보적보선출현료명현적람이현상，단박막적전학특성유소강저。이재MgxZn1- xO/Au/MgxZn1- x O협층결구적박막양품중，Au협층적존재사박막적광학성질변차，재자외구역투광솔약위60％。단박막적전학성질득도명현개선，상비MgxZn1- xO박막，기전조솔화천이솔현저제고。차외통과고온퇴화처리가이유효제고소제비박막적정체질량，진일보제고양품전학특성，기중경과500℃퇴화후적박막천이솔체도료40.9 cm2· V s-1，전조솔위0.0057Ω· cm。단수착퇴화온도적진일보승고，박막정체척촌종25.1 nm증대도32.4 nm ，종이강저료해박막적천이솔。인차해협층결구적MgxZn1- xO/Au/MgxZn1- xO박막대우촉진ZnO기투명도전박막재심자외광학기건중적응용유중요작용。
In the present paper ,MgxZn1 - xO and MgxZn1 - xO/Au/MgxZn1 - xO multilayer structures of transparent conductive film were prepared by the simple operation of sol-gel and RF magnetron sputtering method on quartz substrate respectively and then they were annealed .The surface ,electrical ,crystal and optical properties of the films at different annealing temperature were determined by UV-Vis spectrophotometer ,X-ray diffraction ,photoluminescence and Hall effect ,respectively .The influ-ence of annealing temperature on the films was also investigated .The testing results indicated that the films with good c-axis ori-entation presented hexagonal wurtzite structure .With increasing Mg components ,the optical band gap of ZnO thin film in-creased gradually .There was an obvious blue shift phenomenon in PL spectrum and absorption spectrum line .But the electrical properties of the films declined .In MgxZn1 - xO/Au/MgxZn1 - xO multilayer structure of thin film samples ,the existence of Au interlining led to the poor optical properties of thin film ,and the light transmittance in the ultraviolet region was 60% .Com-pared with MgxZn1 - xO film ,the electrical properties of MgxZn1 - xO/Au/MgxZn1 - xO multilayer structure of transparent conduc-tive film were improved ,the resistivity and migration rate were significantly increased .In addition ,high temperature annealing treatment could effectively improve the crystal quality of thin film and further improve the electrical characteristics of the sam-ples .After the annealing treatment at 500 ℃ ,migration rate of the film reached to 40.9 cm2 · Vs-1 while the resistivity was 0.005 7 Ω· cm .Due to the rising of temperature ,the crystal size increased from 25.1 to 32.4 nm to reduce the mobility of the film .Therefore ,MgxZn1 - xO/Au/MgxZn1 - xO multilayer structure of transparent conductive film played an important role in promoting the ZnO transparent conductive film application in deep ultraviolet devices .
