CAJ | 학술논문

采用了溶胶-凝胶(sol-gel )法分别在LaNiO 3/Si 和 Pt/Ti/SiO 2/Si 基底上制备 Pb (Zr0．52 Ti0．48)O 3(PZT)薄膜.X 射线衍射(XRD)结果表明,在相同的工艺参数下 PZT/LaNiO 3薄膜表现出高度的(100)取向,而 PZT/Pt 薄膜则呈现(100)和(111)多晶混合取向.扫描电子显微镜(SEM)结果显示,PZT/LaNiO 3薄膜表面晶粒尺寸更加均匀.经过铁电和介电性能测试,PZT/LaNiO 3和 PZT/Pt 薄膜的剩余极化强度分别为24．4和15．3μC/cm2,矫顽场分别为130．90和243．23 kV/cm,介电常数分别为1125和453.电场强度＞100 kV/cm 时,漏电流分别为10-5和10-2数量级,同时铁电疲劳性能也明显改善.这些结果表明 PZT/LaNiO 3比 PZT/Pt 薄膜具有更好的电学性能,在铁电和介电器件方面具有良好的应用前景.
채용료용효-응효(sol-gel )법분별재LaNiO 3/Si 화 Pt/Ti/SiO 2/Si 기저상제비 Pb (Zr0．52 Ti0．48)O 3(PZT)박막.X 사선연사(XRD)결과표명,재상동적공예삼수하 PZT/LaNiO 3박막표현출고도적(100)취향,이 PZT/Pt 박막칙정현(100)화(111)다정혼합취향.소묘전자현미경(SEM)결과현시,PZT/LaNiO 3박막표면정립척촌경가균균.경과철전화개전성능측시,PZT/LaNiO 3화 PZT/Pt 박막적잉여겁화강도분별위24．4화15．3μC/cm2,교완장분별위130．90화243．23 kV/cm,개전상수분별위1125화453.전장강도＞100 kV/cm 시,루전류분별위10-5화10-2수량급,동시철전피로성능야명현개선.저사결과표명 PZT/LaNiO 3비 PZT/Pt 박막구유경호적전학성능,재철전화개전기건방면구유량호적응용전경.
Pb(Zr0.5 2 Ti0.48 )O 3 (PZT)thin films were successfully prepared by sol-gel on LaNiO 3/Si and Pt/Ti/SiO 2/Si substrates.The effects of LaNiO 3 (LNO)and Pt bottom electrodes on microstructures and electrical properties of PZT films were discussed.X-ray diffraction (XRD)analysis shows that PZT/LNO films was pre-ferred highly (100 )orientation,while PZT/Pt orients (100 )and (1 1 1 ).This result means electrodes have effects on the growth-orientations of PZT films.Meanwhile,the grain size of PZT/LNO films was more uni-form than that of PZT/Pt films.It was observed that the remnant polarizations of PZT/LNO and PZT/Pt films were 24.4 and 15.3 μC/cm2 ,and the average corresponding coercive field are 130.90 and 243.23 kV/cm,respec-tively.Their relative dielectric constants were 1 125 and 453 at the frequency of 1 kHz.The leakage currents of PZT/LNO and PZT/Pt films were about in the order of 10 -5 and 10 -2 magnitudes at an applied electric field of 100 kV/cm.The ferroelectric fatigue was also improved by using LNO bottom electrode.These results show that PZT/LNO thin films has better ferroelectric and dielectric properties,which could provide a widely applica-tion in ferroelectric and dielectric devices.