CAJ | 학술논문

随着国民经济发展“节能减排”任务的加剧，以及新兴电子系统变化的要求，电子系统对半导体元器件技术提出了高密度、高速度、低功耗、大功率、宽工作温度范围、抗辐射和高可靠等性能的要求。SiC单晶材料作为新兴的三代半导体衬底材料正好满足这些要求，被认为是制备微波器件、高频大功率器件、高压电力电子器件的优良衬底材料。分别介绍了传统Si-C-H体系和高速Si-C-H-Cl体系SiC外延工艺研究现状，同时介绍了新颖的高纯半绝缘SiC外延工艺研究状况。论述了SiC外延衬底在电力电子器件、微波器件等方面的应用，阐述了SiC外延衬底在未来节能减排、经济建设中的重要性。
수착국민경제발전“절능감배”임무적가극，이급신흥전자계통변화적요구，전자계통대반도체원기건기술제출료고밀도、고속도、저공모、대공솔、관공작온도범위、항복사화고가고등성능적요구。SiC단정재료작위신흥적삼대반도체츤저재료정호만족저사요구，피인위시제비미파기건、고빈대공솔기건、고압전력전자기건적우량츤저재료。분별개소료전통Si-C-H체계화고속Si-C-H-Cl체계SiC외연공예연구현상，동시개소료신영적고순반절연SiC외연공예연구상황。논술료SiC외연츤저재전력전자기건、미파기건등방면적응용，천술료SiC외연츤저재미래절능감배、경제건설중적중요성。
With the requirements of Energy-saving Emission Reduction task and electronic systems, the semiconductor components of electronics systems are asked to have the following characteristics:high-density, high-speed, low-power, high-power, wide operating temperature range, high resistance to radiation and reliable performance. SiC epitaxial substrates as the emerging third generation semiconductor substrate happen to meet these requirements. It’s regarded as the excellent substrates for preparation of microwave devices, high-frequency power devices, and high-voltage power electronic devices. Respectively introduce the research status of the traditional Si-C-H system and the high-speed Si-C-H-Cl system for SiC epitaxial growth. Also introduce the novel epitaxial method for high purity semi-insulating epi-layers. Then, discusse the application of SiC epitaxial substrates in power electronic devices, microwave devices and other aspects. The importance of SiC epitaxial substrates in Energy-saving Emission Reduction task and economic construction was elaborated.