CAJ | 학술논문

为降低黑硅材料的成本，将太阳电池级单晶硅片浸入含有氯金酸(HAuCl4)的草酸/氢氟酸(H2 C2 O4/HF)混合水溶液中做刻蚀.利用扫描电子显微镜(SEM)和紫外-可见-近红外分光光度计对表面形貌和反射光谱进行了表征与测量.结果表明：样品表面具有网格状陷光结构，在350~2500 nm波段平均反射率约为11.3%.
위강저흑규재료적성본，장태양전지급단정규편침입함유록금산(HAuCl4)적초산/경불산(H2 C2 O4/HF)혼합수용액중주각식.이용소묘전자현미경(SEM)화자외-가견-근홍외분광광도계대표면형모화반사광보진행료표정여측량.결과표명：양품표면구유망격상함광결구，재350~2500 nm파단평균반사솔약위11.3%.
In order to further reduce the cost of preparation of black silicon,a novel method to prepare black silicon based on as-cut silicon has been performed under H2 C2 O4/HF mixed aque-ous solution containing HAuCl4 . The reflective spectrum of such black silicon surface and the microstructure were measured by UV-VIS-NIR spectrophotometer and scanning electron micro-scope(SEM),respectively.Results show that the sample has grid-like light-trapping structure,its average reflectance is roughly 11.3% in the range of 350~2 500 nm.