4H-SiC外延晶片表面三角型缺陷形成机制及其优化工艺的研究
4H-SiC외연정편표면삼각형결함형성궤제급기우화공예적연구
Study on the Formation Mechanismand Optimization of Tri-defects in 4H-SiC Epitaxial Layers
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    2014年 6期 46-49 ,共4页

    钱卫宁%冯淦%钮应喜%孙永强%李奕洋

    전위저%풍감%뉴응희%손영강%리혁양

    4H-SiC%同质外延%三角型缺陷%缓冲层优化%衬底预刻蚀 4H-SiC%同質外延%三角型缺陷%緩遲層優化%襯底預刻蝕
    4H-SiC%동질외연%삼각형결함%완충층우화%츤저예각식
    4H-SiC%homoepitaxy%tri-defect%optimization of buffer layer%pre-etching of substrate
    通过光学显微镜和表面缺陷检测仪对4H-SiC外延晶片表面三角型缺陷进行观测和分析，发现三角型缺陷大致可以分为两类：头部无任何异物的三角型缺陷和头部带有异物的三角型缺陷。通过理论分析认为：头部无异物缺陷主要是由于缓冲层和外延层的生长条件不同引起的；头部有异物缺陷主要是由于衬底玷污和生长过程中的掉落物引起的。在此基础上针对两种不同缺陷分别提出了相应外延优化工艺：缓冲层优化工艺和生长前衬底刻蚀优化工艺。实验结果显示，这两种优化工艺有效降低了三角型缺陷的数量，提高了外延晶片质量。
    통과광학현미경화표면결함검측의대4H-SiC외연정편표면삼각형결함진행관측화분석，발현삼각형결함대치가이분위량류：두부무임하이물적삼각형결함화두부대유이물적삼각형결함。통과이론분석인위：두부무이물결함주요시유우완충층화외연층적생장조건불동인기적；두부유이물결함주요시유우츤저점오화생장과정중적도락물인기적。재차기출상침대량충불동결함분별제출료상응외연우화공예：완충층우화공예화생장전츤저각식우화공예。실험결과현시，저량충우화공예유효강저료삼각형결함적수량，제고료외연정편질량。
    Triangular defects (tri-defects) in 4H-SiC epitaxial layers have been observed and analyzed by optical microscope and candela in this work. The results show that all tri-defects can be divided into two categories: tri-defect with nothing in the head, tri-defect with something in the head. Through the theoretical analysis, tri-defect with nothing in the head is contributed to the different growth conditions between buffer layer and epilayer, while tri-defect with something in the head is due to the pollution of substrate and the downfall of growth progress. Based on the analysis, optimization of buffer layer and pre-etching of substrate are presented as the technologies of tri-defect reduction. The results of experiments show that the numbers of tri-defect are reduced largely and the quality of the epitaxial wafer is improved using the two technologies.
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