CAJ | 학술논문

基于在双面抛光的蓝宝石衬底上采用等离子体增强的分子束外延方法生长了AlGaN 基p-Al0.45Ga0.55N/i-Al0.35Ga0.65N/n-Al0.45Ga0.55N 结构材料，p型欧姆接触采用电子束蒸发Ni/Au（5 nm/5 nm）薄层叉指结构电极，制作了p-i-n型AlGaN日盲紫外探测器．器件的峰值响应波长为273 nm．器件在零偏压下的暗电流很小，为nA量级，峰值响应度为8.5 mA/W．器件在-5 V偏压下，峰值响应率32.5 mA/W，对应的外量子效率达到15%．
기우재쌍면포광적람보석츤저상채용등리자체증강적분자속외연방법생장료AlGaN 기p-Al0.45Ga0.55N/i-Al0.35Ga0.65N/n-Al0.45Ga0.55N 결구재료，p형구모접촉채용전자속증발Ni/Au（5 nm/5 nm）박층차지결구전겁，제작료p-i-n형AlGaN일맹자외탐측기．기건적봉치향응파장위273 nm．기건재령편압하적암전류흔소，위nA량급，봉치향응도위8.5 mA/W．기건재-5 V편압하，봉치향응솔32.5 mA/W，대응적외양자효솔체도15%．
A kind of solar-blind ultraviolet p-i-n photodetector was designed and fabricated used AlGaN material grown on sapphire substrate by plasma enhanced molecular beam epitaxy method.The material structure is p-Al0.45Ga0.55N/i-Al0.35Ga0.65N/n-Al0.45Ga0.55N based-on AlGaN.P type ohmic contact is Ni/Au(5 nm/5 nm)interdigital electrode to the structure by electron beam evaporation. The peak response of the device occurs at 273 nm. Under zero bias,a dark current is very small with the order of magnitude nA,and a responsivity of 8.5 mA/W.Under-5 V bias,the responsivity reaches to 32.5 mA/W,corresponding to an external quantum efficiency of 15%.