CAJ | 학술논문

在Pt／Ti／SiO2／Si（110）衬底上利用射频磁控溅射法制备了 Ba1-xSrxTiO3（BST）薄膜。基于薄膜的形核理论，研究了成膜时间、衬底温度、溅射功率、溅射气压、氧氩比、退火热处理等参数对薄膜的表面形貌和介电性能的影响。结果表明：在其他溅射参数一定的条件下，薄膜的厚度随溅射时间成指数关系增长；在退火温度600℃下热处理20 min薄膜完全晶化；调节衬底温度、溅射功率、溅射气压等参数有助于制备出表面致密、晶粒大小均匀、具有高介电常数和低损耗的 BST薄膜。
재Pt／Ti／SiO2／Si（110）츤저상이용사빈자공천사법제비료 Ba1-xSrxTiO3（BST）박막。기우박막적형핵이론，연구료성막시간、츤저온도、천사공솔、천사기압、양아비、퇴화열처리등삼수대박막적표면형모화개전성능적영향。결과표명：재기타천사삼수일정적조건하，박막적후도수천사시간성지수관계증장；재퇴화온도600℃하열처리20 min박막완전정화；조절츤저온도、천사공솔、천사기압등삼수유조우제비출표면치밀、정립대소균균、구유고개전상수화저손모적 BST박막。
BST thin films were prepared on Pt/Ti/SiO2/Si substrate by RF-magnetron sputtering. Based on the theory of film nucleation,the surface morphology and dielectric property of film in-fluenced by RF sputtering parameters,such as the sputtering time,substrate temperature,sputte-ring power,sputtering pressure,ratio of oxygen and argon and annealing heat treatment were in-vestigated.The results show that when others sputtering parameters controls,the film thickness increase in a exponential manner with sputtering time.The BST thin films were crystallized when annealing heat treatment in 20 minutes at 600 ℃.The BST thin films with compact surface,uni-form crystalline grain sizes and high dielectric constant,low dielectric loss were obtained by ad-j usting the sputtering parameters.