CAJ | 학술논문

提出一种氢等离子辅助固相晶化(hydrogen plasma assisted solid phase crystallization,H-SPC)多晶硅的新颖技术。这一晶化技术能够明显缩短晶化时间,同时有效钝化多晶硅薄膜的缺陷态。首先对氢等离子辅助 SPC 技术与传统 SPC 技术进行比较分析,进而研究了晶化过程中各种工艺条件对多晶硅晶化质量的影响并进行了物理机制的初步分析。
제출일충경등리자보조고상정화(hydrogen plasma assisted solid phase crystallization,H-SPC)다정규적신영기술。저일정화기술능구명현축단정화시간,동시유효둔화다정규박막적결함태。수선대경등리자보조 SPC 기술여전통 SPC 기술진행비교분석,진이연구료정화과정중각충공예조건대다정규정화질량적영향병진행료물리궤제적초보분석。
In this paper,a novel technology of hydrogen plasma assisted solid phase crystallization polysilicon was proposed.This crystallization technology can not only reduce the crystallization time but also passivate de-fects in the poly-Si thin films effectively.We compared the H-SPC with traditional SPC firstly,and then,inves-tigated the influence of process conditions on the quality of the resultant polysilicon.In addition,we studied the physical mechanism of this crystallization technology.