CAJ | 학술논문

三维集成是当前集成电路技术研究的热点之一，就三维集成的基本结构---SOMOS结构的低频和高频电容-电压特性进行了研究，建立了解析模型，并利用二维半导体器件仿真软件SILVACO对模型进行了验证，二者吻合良好。而后借助该模型，对不同的偏置条件下的低频和高频电容-电压特性的物理机理进行了探讨，证实了通过电容-电压特性法对三维堆叠结构进行无损表征的可行性。
삼유집성시당전집성전로기술연구적열점지일，취삼유집성적기본결구---SOMOS결구적저빈화고빈전용-전압특성진행료연구，건립료해석모형，병이용이유반도체기건방진연건SILVACO대모형진행료험증，이자문합량호。이후차조해모형，대불동적편치조건하적저빈화고빈전용-전압특성적물리궤리진행료탐토，증실료통과전용-전압특성법대삼유퇴첩결구진행무손표정적가행성。
Three-dimensional integration is of great interest to IC technology currently. Low and high frequency capacitance-voltage characteristics of the SOMOS structure,the basic stack structure properties in 3D integration,are investigated. An analytical model is proposed and verified using the two-dimensional semiconductor simulator SILVACO. The results show that both are in good agreement. Based on the model,the physical mechanism of low and high frequency capacitance-voltage characteristics under various bias are researched. This work contributes to the non-destroyed characterization of the 3D stack structure in 3D integrations.