CAJ | 학술논문

针对多通道NAND Flash阵列对可靠性的要求,提出一种坏块管理方案,优化坏块信息的存储和查询方法,把坏块和替换块地址映射表存储在FRAM中。测试数据证明,方案可以实现多通道NAND Flash阵列的坏块管理,保证了存储的可靠性。优化的坏块表及查询方法缩短了坏块查询时间,FRAM节省了有效块地址映射时间,同时FRAM的铁电效应,进一步提高了数据存储的可靠性。
침대다통도NAND Flash진렬대가고성적요구,제출일충배괴관리방안,우화배괴신식적존저화사순방법,파배괴화체환괴지지영사표존저재FRAM중。측시수거증명,방안가이실현다통도NAND Flash진렬적배괴관리,보증료존저적가고성。우화적배괴표급사순방법축단료배괴사순시간,FRAM절성료유효괴지지영사시간,동시FRAM적철전효응,진일보제고료수거존저적가고성。
Aiming at the requirement about the reliability of the multi-channel NAND Flash array,a bad block man-agement method is proposed. The method optimizes the bad block information storage and query methods. A FRAM stores the LBA-PBA address mapping table. The data of tests shows that the method can achieve multi-channel NAND Flash array of bad block management to ensure the reliability of storage. Optimized bad block creation method reduces the bad block query time. The FRAM saves the time of the valid block address mapping. And with the ferroelectric the reliability of data storage is further improved.