CAJ | 학술논문

半导体器件和集成电路的辐射效应，其本质就是电子空穴对的产生和复合、电荷的传输与收集、界面态和氧化层陷阱电荷积累等一系列的物理过程。这些物理过程会受到各种因素的影响，例如上拉补偿管的尺寸、重离子入射角度、器件的外延层浓度等。使用TCAD器件/电路混合模式仿真了以上这些关键变量，同时分析了以上效应对对Buffer电路单粒子效应的影响。最终实验结果证明该模拟方法接近于真实情景。
반도체기건화집성전로적복사효응，기본질취시전자공혈대적산생화복합、전하적전수여수집、계면태화양화층함정전하적루등일계렬적물리과정。저사물리과정회수도각충인소적영향，례여상랍보상관적척촌、중리자입사각도、기건적외연층농도등。사용TCAD기건/전로혼합모식방진료이상저사관건변량，동시분석료이상효응대대Buffer전로단입자효응적영향。최종실험결과증명해모의방법접근우진실정경。
For semiconductor devices and ICs,the essence of radiation effect is a series of physical process including the generation and recombination of electron-hole pairs,the transmission and collection of charge,the interface state and accumulation of oxide trapped charge. Several factors might affect the physical process,such as the size of the pull-up compensating MOSFET,the incidence angle of the heavy ion,the substrate concentration of the device. This paper simulates how these key variables influence on the single event effect of the Buffer cell using mixed-mode TCAD simulations. Finally the experiment result approach to the real scene.