CAJ | 학술논문

利用中频脉冲磁控溅射工艺制备ITO薄膜，研究了在衬靶间距为60mm、衬底温度为350℃、溅射功率为120W、溅射气压为0.2Pa的条件下，氧氩比(O2/Ar)、溅射时间对ITO薄膜表面形貌、膜厚、沉积速率及光电性能的影响。通过实验和分析，最终确定了在玻璃衬底上制备ITO薄膜的最佳氧氩比和溅射时间：氧氩比为0.4：40，溅射时间为45min，获得了方阻为2.55Ω/□,电阻率为1.46×10-4Ω·cm ，可见光范围内平均透过率为81.2%的薄膜。
이용중빈맥충자공천사공예제비ITO박막，연구료재츤파간거위60mm、츤저온도위350℃、천사공솔위120W、천사기압위0.2Pa적조건하，양아비(O2/Ar)、천사시간대ITO박막표면형모、막후、침적속솔급광전성능적영향。통과실험화분석，최종학정료재파리츤저상제비ITO박막적최가양아비화천사시간：양아비위0.4：40，천사시간위45min，획득료방조위2.55Ω/□,전조솔위1.46×10-4Ω·cm ，가견광범위내평균투과솔위81.2%적박막。
The effects of sputtering time and proportion of oxygen and argon gas on properties of ITO thin films deposited by Mid-Frequency Pulsed Magnetron Sputtering were investigated while the substrat tem perature was350 ℃, sputtering power was 120W and sputtering pressure was 0.2 Pa.Through experim ents and analysis, the optimum sputtering time and proportion of oxygen and argon gas of depositing ITO thin lms was achieved:proportion of oxygen and argon gas is 0.4:40 and the sputtering time is 45min. High quality ITO thin films with the sheet resistance of 2.55 Ω/□, the resistivity of 1.46x10-4 Ω·cm and the optical transm ittance of 81.2 % in the visible spectrum range w ere obtained.