CAJ | 학술논문

采用分子束外延的方法进行了低Al组分In1-xAlxSb 薄膜的生长和优化。通过在InSb （100）衬底上外延生长一系列不同条件的In1-xAlxSb薄膜，分析总结了衬底的热脱氧特征以及InAlSb薄膜低Al组分（2％左右）的控制，探讨了退火和InSb缓冲层的优化等参数对In1-xAlxSb外延薄膜表面形貌和质量的影响。测试结果表明薄膜质量得到极大改进。
채용분자속외연적방법진행료저Al조분In1-xAlxSb 박막적생장화우화。통과재InSb （100）츤저상외연생장일계렬불동조건적In1-xAlxSb박막，분석총결료츤저적열탈양특정이급InAlSb박막저Al조분（2％좌우）적공제，탐토료퇴화화InSb완충층적우화등삼수대In1-xAlxSb외연박막표면형모화질량적영향。측시결과표명박막질량득도겁대개진。
Low-aluminium In1 -xAlxSb film is growth and optimized by molecular beam epitaxial method.After a series of In1 -xAlxSb films were grown on InSb (1 00)substrate under different conditions,the thermal deoxidation character-ization of the substrate and the low-aluminium component control (approximate 2%)were analyzed,and the effect of process parameters such as annealing and InSb buffer layer optimization etc on morphology and quality of the film was discussed.The test results show the quality of the film has a great improvement.