原子能科学技术
原子能科學技術
원자능과학기술
ATOMIC ENERGY SCIENCE AND TECHNOLOGY
2014年
10期
1729-1733
,共5页
欧阳永中%易有根%朱正和%郑志坚
歐暘永中%易有根%硃正和%鄭誌堅
구양영중%역유근%주정화%정지견
磁四极%能级间隔%跃迁波长%跃迁概率%振子强度
磁四極%能級間隔%躍遷波長%躍遷概率%振子彊度
자사겁%능급간격%약천파장%약천개솔%진자강도
magnetic quadrupole%energy level interval%transition wavelength%transi-tion probability%oscillator strength
采用全相对论多组态Dirac-Fock方法,对高离化类镁离子的磁四极3s21 S0-3s3 p 3 P2(Z=20~103)自旋禁戒跃迁的能级间隔、跃迁波长、跃迁概率和振子强度等光谱跃迁参数进行了系统计算,计算中考虑了重要核的有限体积效应、Breit修正和QED修正,所得结果和最近已有的实验数据进行了比较。结果表明,高原子序数的高电荷离子( Z≥70)磁四极自旋禁戒跃迁几乎可与中性原子的光学允许跃迁相比拟,不仅在天体等离子体中,在ICF和MCF高温激光等离子体中,磁四极自旋禁戒跃迁和其他自旋禁戒跃迁(磁偶极、电四极)一样不容忽视,在双电子复合、不透明度、自由程等理论计算中应考虑其影响。
採用全相對論多組態Dirac-Fock方法,對高離化類鎂離子的磁四極3s21 S0-3s3 p 3 P2(Z=20~103)自鏇禁戒躍遷的能級間隔、躍遷波長、躍遷概率和振子彊度等光譜躍遷參數進行瞭繫統計算,計算中攷慮瞭重要覈的有限體積效應、Breit脩正和QED脩正,所得結果和最近已有的實驗數據進行瞭比較。結果錶明,高原子序數的高電荷離子( Z≥70)磁四極自鏇禁戒躍遷幾乎可與中性原子的光學允許躍遷相比擬,不僅在天體等離子體中,在ICF和MCF高溫激光等離子體中,磁四極自鏇禁戒躍遷和其他自鏇禁戒躍遷(磁偶極、電四極)一樣不容忽視,在雙電子複閤、不透明度、自由程等理論計算中應攷慮其影響。
채용전상대론다조태Dirac-Fock방법,대고리화류미리자적자사겁3s21 S0-3s3 p 3 P2(Z=20~103)자선금계약천적능급간격、약천파장、약천개솔화진자강도등광보약천삼수진행료계통계산,계산중고필료중요핵적유한체적효응、Breit수정화QED수정,소득결과화최근이유적실험수거진행료비교。결과표명,고원자서수적고전하리자( Z≥70)자사겁자선금계약천궤호가여중성원자적광학윤허약천상비의,불부재천체등리자체중,재ICF화MCF고온격광등리자체중,자사겁자선금계약천화기타자선금계약천(자우겁、전사겁)일양불용홀시,재쌍전자복합、불투명도、자유정등이론계산중응고필기영향。
A full relativistic multi-configuration Dirac-Fock theory with quantum electro-dynamical (QED) effect and Berit correction was employed to calculate the magnetic quadrupole 3s2 1 S0-3s3p 3 P2 (Z= 20-103) transition energy level intervals ,transition wavelengths ,transition probabilities and oscillator strengths for Mg-like ions . The results ,which consider the finite volume size effect ,Breit and QED corrections ,were used for comparsing with the recent experimental data .The results show that the mag-netic quadrupole transition probabilities of highly ionized atom ions are in accordance with those of neutral atomic allowed transitions and cannot be ignored in the laser plas-ma of high temperature in ICF and MCF fusions .The effects of the magnetic quadrupole transition of highly ionized atom ions should be considered in the calculation of dielec-tronic recombination process ,opacity ,free path and so on .