CAJ | 학술논문

设计并实现了一种适用于X波段（11~12 GHz）的高性能低噪声放大器（LNA），该低噪声放大器选用GaAs FET（MGF4941AL）低噪声半导体管，采用三级级联的方式设计，三级通过采用不同静态工作点之间的配合，达到降低放大器噪声提高增益的目的。利用微波电路仿真软件 ADS 仿真优化后加工实物并测试。测试结果表明，低噪声放大器在11~12 GHz工作频带内的噪声系数小于2 dB，输入/输出驻波比（VSWR）小于2，功率增益大于30 dB，增益平坦度小于1.5 dB，适用于X波段接收机前端。
설계병실현료일충괄용우X파단（11~12 GHz）적고성능저조성방대기（LNA），해저조성방대기선용GaAs FET（MGF4941AL）저조성반도체관，채용삼급급련적방식설계，삼급통과채용불동정태공작점지간적배합，체도강저방대기조성제고증익적목적。이용미파전로방진연건 ADS 방진우화후가공실물병측시。측시결과표명，저조성방대기재11~12 GHz공작빈대내적조성계수소우2 dB，수입/수출주파비（VSWR）소우2，공솔증익대우30 dB，증익평탄도소우1.5 dB，괄용우X파단접수궤전단。
An X-band (11-12 GHz) high-performance low noise amplifier (LNA) was designed and fabricated. The GaAs FET (MGF4941AL) was selected and a three-level cascade amplifier structure was adopted in the design. In order to restrain the noise and to improve the gain, the static working points of each level amplifier were calculated and set respectively. The LNA circuit was simulated by ADS, and then manufactured and tested. The results show that the noise coefficient is lower than 2 dB in workband, VSWR( input/output) is lower than 2, the power gain is above 30 dB and the gain flatness is lower than 1.5 dB. The low noise amplifier is suitable for X-band front-end of receivers.