CAJ | 학술논문

室温下采用反应磁控溅射的方法，利用 CO2作碳源和氧源制备了碳掺杂 Ti-O 薄膜。X 射线衍射(XRD)、光射线电子能谱(XPS)和拉曼光谱用于表征薄膜的成分和结构。采用紫外-可见(UV-Vis)分光光度计测量了薄膜的吸光度并通过作图计算得到其带隙宽度。结果表明，用 CO2作碳源和氧源，可得到 C 掺杂的Ti-O 薄膜。当掺杂碳时，钛氧膜中金红石相特征峰显著减弱，且碳以取代 O 原子的形式掺杂在薄膜中并促使 TiO 相的出现。当反应气体为 CO2和 O2共存时，钛原子优先与氧原子结合并抑制 TiO 相的形成。碳的掺入能有效降低 TiO2带隙宽度，使薄膜的吸收边扩展到可见光区，提高对可见光的吸收。
실온하채용반응자공천사적방법，이용 CO2작탄원화양원제비료탄참잡 Ti-O 박막。X 사선연사(XRD)、광사선전자능보(XPS)화랍만광보용우표정박막적성분화결구。채용자외-가견(UV-Vis)분광광도계측량료박막적흡광도병통과작도계산득도기대극관도。결과표명，용 CO2작탄원화양원，가득도 C 참잡적Ti-O 박막。당참잡탄시，태양막중금홍석상특정봉현저감약，차탄이취대 O 원자적형식참잡재박막중병촉사 TiO 상적출현。당반응기체위 CO2화 O2공존시，태원자우선여양원자결합병억제 TiO 상적형성。탄적참입능유효강저 TiO2대극관도，사박막적흡수변확전도가견광구，제고대가견광적흡수。
In this paper,carbon-doped Ti-O films were prepared on silicon wafer by reaction magnetron sputte-ring using CO2 as carbon and oxygen source.The composition and structure of as-prepared Ti-O films were characterized by XRD,XPS and Raman spectra.The thickness of the as-prepared Ti-O films was characterized by profilometer.Ultraviolet-visible (UV-Vis)spectrophotometer was used to record the absorbance of as-pre-pared Ti-O films,the band gaps of as-prepared Ti-O films have been calculated by plotting too.The results showed that C doped Ti-O films were synthesized successfully using CO2 gas as C and O source and rutile phase in the Ti-O films had a significant decrease after carbon doped and carbon was doped in the Ti-O lattice by the means of carbon substituted for oxygen,and the crystallization of TiO phase was also promoted.When CO2 and O2 coexisted as reactive gas,Ti atom was priority to combine with oxygen atom and restrained the formation of TiO phase.Carbon doping could decrease the band-gap of and make the absorption edge extended from UV to visible light region and improved the absorption of visible light.