CAJ | 학술논문

制备了基于 N-BDAVBi 的高效率双发光层蓝色有机电致发光器件（OLED），器件中将蓝色荧光染料 N-BDAVBi 作为客体发光材料分别掺入主体材料 TCTA 和 TPBi 中，器件结构为 ITO/ m-MTDATA（40 nm）/ NPB（10 nm）/ TCTA：N-BDAVBi（15 nm）/ TPBi：N-BDAVBi（15 nm）/ TPBi（30 nm）/ LiF（0.6 nm）/ Al（150 nm），最大电流效率达到8.44 cd/ A，CIE 色坐标为（0.176，0.314），并且在12 V 的电压下，亮度最大达到11860 cd/ m2，分别是单发光层结构器件的1.85倍和1.2倍.器件性能提高主要归因于双发光层扩大了载流子复合区域，主客体间的Forster 能量转移.
제비료기우 N-BDAVBi 적고효솔쌍발광층람색유궤전치발광기건（OLED），기건중장람색형광염료 N-BDAVBi 작위객체발광재료분별참입주체재료 TCTA 화 TPBi 중，기건결구위 ITO/ m-MTDATA（40 nm）/ NPB（10 nm）/ TCTA：N-BDAVBi（15 nm）/ TPBi：N-BDAVBi（15 nm）/ TPBi（30 nm）/ LiF（0.6 nm）/ Al（150 nm），최대전류효솔체도8.44 cd/ A，CIE 색좌표위（0.176，0.314），병차재12 V 적전압하，량도최대체도11860 cd/ m2，분별시단발광층결구기건적1.85배화1.2배.기건성능제고주요귀인우쌍발광층확대료재류자복합구역，주객체간적Forster 능량전이.
The high-efficiency and double emitting layers blue light emitting devices was fabricated in the paper. In this device,blue fluorescent material N-BDAVBi was guest which was doped into two host material of TCTA and TPBi. The device structure included indium tin oxide glass(ITO)/ m-MTDATA(40 nm)/ NPB(10 nm)/TCTA:N-BDAVBi(15 nm)/ TPBi:N-BDAVBi(15 nm)/ TPBi(30 nm)/ LiF(0. 6 nm)/ Al(150 nm). The maximum luminance efficiency was 8. 44 cd / A,which was 1. 85 times and 1. 2 times of the single light-emitting layer structure devices. CIE colour was(0. 176,0. 314). The maximum luminance of more than 20 620 cd / m2 had been achieved at 12 V. The reason of high capability was the expansion of the recombination zone in double emission layers structure,and fully Forster energy transfer in blue OLEDs.