CAJ | 학술논문

本文采用恒电位法探索了CuSO4和乳酸溶液在摩尔比为1：3的条件下络合，以三电极体系在导电玻璃上沉积C u2 O薄膜的最佳工艺条件。通过分析C u2＋与络合剂乳酸在不同的溶液温度，沉积电位、以及溶液pH的条件下络合，来确定其对Cu2 O薄膜的影响。采用X －射线衍射分析和扫描电子显微镜对薄膜样品结构和形貌进行表征。结果表明，在Cu2＋与乳酸的摩尔比为1：3，溶液温度为65℃～75℃，沉积电位为－1．2V～－2．8V ，溶液的 pH＝10～12的条件下，得到（111）择优取向生长的 Cu2 O 薄膜，呈砖红色，致密均匀。C u2 O膜（200）择优取向生长的参数范围是：溶液温度65℃，沉积电位－1．2 V ，p H＝7～9。
본문채용항전위법탐색료CuSO4화유산용액재마이비위1：3적조건하락합，이삼전겁체계재도전파리상침적C u2 O박막적최가공예조건。통과분석C u2＋여락합제유산재불동적용액온도，침적전위、이급용액pH적조건하락합，래학정기대Cu2 O박막적영향。채용X －사선연사분석화소묘전자현미경대박막양품결구화형모진행표정。결과표명，재Cu2＋여유산적마이비위1：3，용액온도위65℃～75℃，침적전위위－1．2V～－2．8V ，용액적 pH＝10～12적조건하，득도（111）택우취향생장적 Cu2 O 박막，정전홍색，치밀균균。C u2 O막（200）택우취향생장적삼수범위시：용액온도65℃，침적전위－1．2 V ，p H＝7～9。
The processing conditions to prepare Cu2 O film on ITO substrate by potentiostatic method were explored under the condition of molar ratio of CuSO 4 and lactic acid 1 :3 in a three electrode sys‐tem .The effect of the parameters including deposition temperature ,potential ,and solution pH com‐plexation on the obtained Cu2O film were investigated in detail .The prepared Cu2O samples were characterized by X -ray diffractometer(XRD) and scanning electronic microscopy(SEM) .The results showed that compact and uniform brick red Cu2 O films with preferential orientation in (111) direction can be obtained under the conditions :mole ratio of Cu2+ and lactic acid is 1 :3 ,deposition tempera‐ture ,potential and pH are in the range of 65 ℃ ~ 75 ℃ ,-1 .2 V ~ -2 .8 V ,and 10 ~ 12 ,respec‐tively .Whereas the (200)-oriented Cu2 O can be obtained under potential of -1 .2 V ,pH of 7 to 9 , and temperature at 65 ℃ .