CAJ | 학술논문

对一种基于生长在半绝缘InP衬底上InGaAs外延材料的新型太赫兹室温探测器进行研究。首先在HFSS理论计算的基础上对器件天线阻抗、驻波比、辐射方向图等特性参数进行分析。其次，通过光刻、腐蚀、溅射、点焊等工艺制作出对称金属电极天线耦合的太赫兹探测器件。结合自己搭建的0.0375 THz器件响应测试系统，得到铟镓砷太赫兹探测器件在不同偏置电流和不同调制频率下的器件响应曲线。结果表明器件具有明显的光电信号和快的响应速度。通过利用高莱探测器进行标定，得到器件在0.0375 THz时的电压灵敏度优于6 V/W，器件噪声等效功率NEP优于1.6×10-9 W/Hz1/2，器件响应时间优于300μs。
대일충기우생장재반절연InP츤저상InGaAs외연재료적신형태혁자실온탐측기진행연구。수선재HFSS이론계산적기출상대기건천선조항、주파비、복사방향도등특성삼수진행분석。기차，통과광각、부식、천사、점한등공예제작출대칭금속전겁천선우합적태혁자탐측기건。결합자기탑건적0.0375 THz기건향응측시계통，득도인가신태혁자탐측기건재불동편치전류화불동조제빈솔하적기건향응곡선。결과표명기건구유명현적광전신호화쾌적향응속도。통과이용고래탐측기진행표정，득도기건재0.0375 THz시적전압령민도우우6 V/W，기건조성등효공솔NEP우우1.6×10-9 W/Hz1/2，기건향응시간우우300μs。
A brand new type of terahertz/sub-millimeter wave detector based on InGaAs material grown on semi-insulate InP substrate was proposed with an Metal-Semiconductor-Metal (MSM) structure. High Frequency Structural Simulator(HFSS) software was firstly used to characterize the metallic planar antenna by calculating its resistance, standing-wave ratio (SWR), and the radiation pattern. Detectors with symmetrical metallic antenna were fabricated by a serious of technical process mainly including photolithograph, etching, and sputtering. Photoresponse of the detector with respect to the bias current and the modulation frequency was measured by a homemade measure system with a 0.037 5 THz Gunn oscillator terahertz source. The results show large photovoltage signal and fast respond speed (<300μs) of the device. The voltage sensitivity of the detector at 0.037 5 THz reaching to 6 V/W was further obtained by the calibration of a Golay cell detector. And the noise equivalent power (NEP) at this frequency was 1.6×10-9 W/Hz1/2.