电子器件
電子器件
전자기건
JOURNAL OF ELECTRON DEVICES
2014年
3期
412-415
,共4页
张弛振荡器%延时%温度补偿%CMOS
張弛振盪器%延時%溫度補償%CMOS
장이진탕기%연시%온도보상%CMOS
relaxation oscillator%time delay%temperature coefficient%CMOS
提出一种新的带温度补偿的张弛振荡器,采用正温度系数的阱电阻实现输出频率在大范围温度变化下保持稳定。该电路采用0.35μm的CMOS工艺实现,利用Cadence进行仿真验证。仿真结果显示,在-45℃~55℃范围内,该张弛振荡器的温度系数仅为404×10-9/℃。该振荡器振荡频率受温度影响很小,已经应用于工业控制类芯片中。
提齣一種新的帶溫度補償的張弛振盪器,採用正溫度繫數的阱電阻實現輸齣頻率在大範圍溫度變化下保持穩定。該電路採用0.35μm的CMOS工藝實現,利用Cadence進行倣真驗證。倣真結果顯示,在-45℃~55℃範圍內,該張弛振盪器的溫度繫數僅為404×10-9/℃。該振盪器振盪頻率受溫度影響很小,已經應用于工業控製類芯片中。
제출일충신적대온도보상적장이진탕기,채용정온도계수적정전조실현수출빈솔재대범위온도변화하보지은정。해전로채용0.35μm적CMOS공예실현,이용Cadence진행방진험증。방진결과현시,재-45℃~55℃범위내,해장이진탕기적온도계수부위404×10-9/℃。해진탕기진탕빈솔수온도영향흔소,이경응용우공업공제류심편중。
A relaxation oscillator with high temperature rejection characteristics is presented. This relaxation oscillator adopts the temperature compensation method of single chip relaxation oscillator,using well diffuse resistor with positive temperature coefficient to compensate. Fabricated in a 0. 35 μm CMOS process and verified by the Cadence simulation,this relaxation oscillator has only the temperature coefficient of 404í10-9/℃ in the range of-45 ℃ ~55 ℃. Also, the oscillation frequency has slim influence of the temperature change. This circuit has applied successfully in industrial control chip.