固体火箭技术
固體火箭技術
고체화전기술
JOURNAL OF SOLID ROCKET TECHNOLOGY
2014年
5期
724-728,733
,共6页
张渭阳%郭领军%王少龙%景伟%付前刚
張渭暘%郭領軍%王少龍%景偉%付前剛
장위양%곽령군%왕소룡%경위%부전강
低压化学气相沉积%沉积位置%SiC涂层%微观结构
低壓化學氣相沉積%沉積位置%SiC塗層%微觀結構
저압화학기상침적%침적위치%SiC도층%미관결구
low pressure chemical vapor deposition ( LPCVD)%position%SiC coating%microstructure
采用低压化学气相沉积法( LPCVD)在炭纤维表面制备了SiC涂层,借助扫描电镜、X射线衍射仪和拉曼光谱仪对不同沉积位置SiC涂层的微观形貌和晶体结构进行了表征。 SEM结果表明,沿气流方向,涂层表面逐渐致密和均匀;SiC涂层为多层结构,这种多层结构的形成可能是由于反应中产生的HCl气体吸附在表面反应活性点,从而通过活性点的阻塞机制来阻止SiC晶粒的生长。 XRD结果表明,制备的涂层中存在自由碳,各位置处的SiC晶体在(111)晶面存在择优取向,且沿气流方向(111)晶面的取向性逐渐减弱,(220)和(311)晶面的取向性逐渐增加。拉曼光谱低段频谱(200~600 cm-1)的出现表明CVD涂层中存在一定的缺陷。
採用低壓化學氣相沉積法( LPCVD)在炭纖維錶麵製備瞭SiC塗層,藉助掃描電鏡、X射線衍射儀和拉曼光譜儀對不同沉積位置SiC塗層的微觀形貌和晶體結構進行瞭錶徵。 SEM結果錶明,沿氣流方嚮,塗層錶麵逐漸緻密和均勻;SiC塗層為多層結構,這種多層結構的形成可能是由于反應中產生的HCl氣體吸附在錶麵反應活性點,從而通過活性點的阻塞機製來阻止SiC晶粒的生長。 XRD結果錶明,製備的塗層中存在自由碳,各位置處的SiC晶體在(111)晶麵存在擇優取嚮,且沿氣流方嚮(111)晶麵的取嚮性逐漸減弱,(220)和(311)晶麵的取嚮性逐漸增加。拉曼光譜低段頻譜(200~600 cm-1)的齣現錶明CVD塗層中存在一定的缺陷。
채용저압화학기상침적법( LPCVD)재탄섬유표면제비료SiC도층,차조소묘전경、X사선연사의화랍만광보의대불동침적위치SiC도층적미관형모화정체결구진행료표정。 SEM결과표명,연기류방향,도층표면축점치밀화균균;SiC도층위다층결구,저충다층결구적형성가능시유우반응중산생적HCl기체흡부재표면반응활성점,종이통과활성점적조새궤제래조지SiC정립적생장。 XRD결과표명,제비적도층중존재자유탄,각위치처적SiC정체재(111)정면존재택우취향,차연기류방향(111)정면적취향성축점감약,(220)화(311)정면적취향성축점증가。랍만광보저단빈보(200~600 cm-1)적출현표명CVD도층중존재일정적결함。
SiC coatings were prepared on carbon fibers by low pressure chemical vapor deposition (LPCVD).The morphologies and crystalline structures of the coating at different deposition sites were analyzed by scanning electron microscopy (SEM),X-ray diffraction (XRD) and Raman spectra (RMS).The SEM images show that the coatings are dense and uniform along the gas flow di-rection. Furthermore,the coatings are multi-layers affected by the HCl, which is produced during the pyrolysis process.This phenom-enon can be explained by the “block active sites” mechanism. The results of XRD show that the free carbon coexists within the coatings and the (111) plane of-SiC crystallines at all positions are all preferred orientation.The degree of (111) plane preferred o-rientation is decreased,while other orientations such as ( 220) and ( 331) preferred orientation are increased along the gas direction. The appearance of a group of low-frequency bands at 200~600 cm-1 in RMS indicates that some defects exist in the SiC crystalline.