CAJ | 학술논문

随着GaAs PHEMT(赝配高电子迁移率晶体管)器件的广泛应用，器件的可靠性及失效分析方法越来越受到人们的重视。该文采用半导体参数分析仪、聚焦离子束(FIB)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)、能谱仪(EDX)等分析方法对一种PHEMT器件进行失效分析，为实际生产和加工过程中的失效分析提供了参考。
수착GaAs PHEMT(안배고전자천이솔정체관)기건적엄범응용，기건적가고성급실효분석방법월래월수도인문적중시。해문채용반도체삼수분석의、취초리자속(FIB)、소묘전자현미경(SEM)、투사전자현미경(TEM)、능보의(EDX)등분석방법대일충PHEMT기건진행실효분석，위실제생산화가공과정중적실효분석제공료삼고。
With the extensive applications of GaAs PHEMT devices,more and more attentions were put on the reliability and failure analysis methods of devices.This paper used the techniques of semiconductor parame-ters analyzer,focused ion beam (FIB),scanning electron microscope (SEM) and transmission electron micro-scope (TEM) with EDX to analyze the failure cause of PHEMT devices.And it provided references for failure analysis in real fabrications and productions.