CAJ | 학술논문

采用NaClO和IPA体系对单晶硅各向异性腐蚀制备绒面。通过紫外可见光光度计和扫描电镜对硅绒面的反射率、形貌进行了表征。结果表明,当NaClO为10%(质量分数,下同), IPA为5%,腐蚀温度为80℃,腐蚀时间为15 min时,能够得到均匀单晶硅绒面,硅片平均反射率达15%左右；与传统的NaOH/IPA腐蚀体系相比,该工艺制得的单晶硅绒面结构反射率低,有利于太阳能电池性能的提高。
채용NaClO화IPA체계대단정규각향이성부식제비융면。통과자외가견광광도계화소묘전경대규융면적반사솔、형모진행료표정。결과표명,당NaClO위10%(질량분수,하동), IPA위5%,부식온도위80℃,부식시간위15 min시,능구득도균균단정규융면,규편평균반사솔체15%좌우；여전통적NaOH/IPA부식체계상비,해공예제득적단정규융면결구반사솔저,유리우태양능전지성능적제고。
A novel anisotropic etching process based on a composition of sodium hypochlorite ( NaClO) /isopropyl alcohol ( IPA) was used to etch the surface of single crystal wafer silicon for solar cells. The surface structure and reflectance were characterized by UV-visible spectroscopy and. scanning electron microscope The results suggested that a uniform pyramid structure could be formed and the average reflection of surface was about 15% under 10% NaClO( in mass, the same below) /3% IPA solution at 80 ℃ for 15 min. Compared with wafers fabricated with the traditional industrial process of NaOH/IPA, we obtained wafers with lower reflectance which can improve the performance of solar energy cells.